Thermal Stresses of Through

Thermal conduction and mechanical stresses in through silicon via (TSV) structures in three dimensional system in package (3D SiP) under device operation condition were dis-cussed. A large scale simulator, ADVENTUREClusterV R based on finite element method (FEM) was used to simulate the effects of voids formed inside Cu TSVs on the thermal con-duction and mechanical stresses in the TSV structure. The thermal performance that was required in 3D SiP was estimated to ensure the reliability. Simulations for thermal stresses in the TSV structure in 3D SiP were carried out under thermal condition due to power ON/ OFF of device. In case that void was not present inside the TSV, the stresses in TSV were close to the hydrostatic pressure and the magnitude of the equivalent stress was lower than the yield stress of copper. Maximum principal stress of the Si chip in the TSV structure for the case without voids was lower than that of the bending strength of silicon. However, the level of the stresses in the Si chips should not be negligible for damages to Si chips. In case that void was present inside the TSV, stress concentration was occurred around the void in the TSV. The magnitude of the equivalent stress in the TSV was lower than the yield stress of copper. The magnitude of the maximum principal stress of the Si chip was lower than that of the bending strength of silicon. However, its level should not be negligible for dam-ages to TSVs and Si chips. The stress on inner surfaces of Si chip was slightly reduced due to the presence of a void in the TSV. [DOI: 10.1115/1.4006515