The dissolution processes involved in the formation of porous films in sulfuric acid have been studied by suddenly lowering the formation voltag.e and observing changes in the current flowing and the barrier layer capacl-tance as steady-state conditions are re-established. It was found that current changes always follow capacitance changes, and that the dissolution proc-esses involved are (a) initial ly a short time region of chemical dissolution is found up to some point where the minimum electric field strength required for ionic migration is approached, and (b) a second stage dissolution as-sisted by the presence of this electric field. The change from one dissolution rate to the other is continuous as this min imum electric field is app...
AbstractPrevious work has shown that a low level of sulphate impurity in chromic acid can significan...
In the first part, a mathematical model was developed for oxide thickness and faradaic current, assu...
ization e inte s to in patial the m which 164 A ceived interfaces and the contribution of elastic s...
Experiments are described in which a luminum samples, covered with a porous oxide layer by anodizati...
The heat developing at the oxide-aluminium interface during anodizing in sulfuric acid has been meas...
A mathematical model was formulated for the surface film on aluminum which considered the film to co...
The mechanism accounting for the self-organization of nanoscale pores during anodic oxidation of alu...
Mechanism of the formation of pores in the anodic oxide films on Al in sulfuric acid solution was st...
The growth behavior of anodic oxide films formed via anodizing in glutaric and its derivative acid s...
The present study is concerned with the mechanism of growth of porous anodic films formed on high pu...
The mechanisms of pattern formation on anodized aluminum electrodes in contact with various acid sol...
Chemical dissolution processes coupled to anodic oxide growth taking place by a "high-field" conduct...
It was shown that the dissolution rate and the nature of its change depend on the acid nature, the s...
Galvanostatic formation of nanoporous anodic films on aluminum was performed in 0.6 mol•dm− 3 maloni...
A novel self-sticking adhesive tape for the local anodization of aluminum that can be removed withou...
AbstractPrevious work has shown that a low level of sulphate impurity in chromic acid can significan...
In the first part, a mathematical model was developed for oxide thickness and faradaic current, assu...
ization e inte s to in patial the m which 164 A ceived interfaces and the contribution of elastic s...
Experiments are described in which a luminum samples, covered with a porous oxide layer by anodizati...
The heat developing at the oxide-aluminium interface during anodizing in sulfuric acid has been meas...
A mathematical model was formulated for the surface film on aluminum which considered the film to co...
The mechanism accounting for the self-organization of nanoscale pores during anodic oxidation of alu...
Mechanism of the formation of pores in the anodic oxide films on Al in sulfuric acid solution was st...
The growth behavior of anodic oxide films formed via anodizing in glutaric and its derivative acid s...
The present study is concerned with the mechanism of growth of porous anodic films formed on high pu...
The mechanisms of pattern formation on anodized aluminum electrodes in contact with various acid sol...
Chemical dissolution processes coupled to anodic oxide growth taking place by a "high-field" conduct...
It was shown that the dissolution rate and the nature of its change depend on the acid nature, the s...
Galvanostatic formation of nanoporous anodic films on aluminum was performed in 0.6 mol•dm− 3 maloni...
A novel self-sticking adhesive tape for the local anodization of aluminum that can be removed withou...
AbstractPrevious work has shown that a low level of sulphate impurity in chromic acid can significan...
In the first part, a mathematical model was developed for oxide thickness and faradaic current, assu...
ization e inte s to in patial the m which 164 A ceived interfaces and the contribution of elastic s...