crystal diameter is that for smaller crystal diameters the edge effects are of increasing importance, i.e., the rotating disk analysis ceases to be valid and the boundary layer thickness becomes a function of the radius. Summary The radial solute segregation in Czochralski-grown silicon crystals has been shown to be greatly in-fluenced by the effects of secondary liquid flow in the outer regions of the solid-liquid interface. The exist-ence of interface facets will also cause large radial segregation because of the orientation dependence of the equil ibrium distribution coefficient. However, the effects of liquid flow must be studied independently if unambiguous information is required on the facet effect alone. Maximum radial solute unifor...
The linear diffusion-reaction theory with finite interface kinetics is employed to describe the diss...
Herein, facets and related phenomena are studied for silicon crystals grown in the and directions,...
This paper reports the relationship between oxygen concentration and dislocation multiplication in s...
The distribution of dopants and impurities in silicon grown with the floating zone method determines...
During the growth of [001]-oriented, heavily n-type doped silicon crystals by the Czochralski (CZ) m...
The ring diameter of ring-like distributed oxidation induced stacking faults (OSF) in Czochralski gr...
The radial distribution of grown-in microdefects in eight Czochralski-grown silicon crystals was mea...
The pure diffusion process has been often used to study the crystal growth of a binary alloy in the ...
An attempt has been made in this thesis to put on a sound basis, the relation between interface morp...
Effects of the operating conditions on the crystal-melt interface shape are analytically investigate...
The distribution in a mixed crystal A1-xBxC grown from an either (A, B)-rich or C-rich solution zone...
The pure diffusion process has been often used to study the crystal growth of a binary alloy in the ...
Electrical resistivity distribution maps have been constructed for single crystal silicon wafers cut...
International audienceThe present paper focuses on solute segregation occurring in directional solid...
Silicon and germanium exhibit complete solid solubility for all binary concentrations. However, the ...
The linear diffusion-reaction theory with finite interface kinetics is employed to describe the diss...
Herein, facets and related phenomena are studied for silicon crystals grown in the and directions,...
This paper reports the relationship between oxygen concentration and dislocation multiplication in s...
The distribution of dopants and impurities in silicon grown with the floating zone method determines...
During the growth of [001]-oriented, heavily n-type doped silicon crystals by the Czochralski (CZ) m...
The ring diameter of ring-like distributed oxidation induced stacking faults (OSF) in Czochralski gr...
The radial distribution of grown-in microdefects in eight Czochralski-grown silicon crystals was mea...
The pure diffusion process has been often used to study the crystal growth of a binary alloy in the ...
An attempt has been made in this thesis to put on a sound basis, the relation between interface morp...
Effects of the operating conditions on the crystal-melt interface shape are analytically investigate...
The distribution in a mixed crystal A1-xBxC grown from an either (A, B)-rich or C-rich solution zone...
The pure diffusion process has been often used to study the crystal growth of a binary alloy in the ...
Electrical resistivity distribution maps have been constructed for single crystal silicon wafers cut...
International audienceThe present paper focuses on solute segregation occurring in directional solid...
Silicon and germanium exhibit complete solid solubility for all binary concentrations. However, the ...
The linear diffusion-reaction theory with finite interface kinetics is employed to describe the diss...
Herein, facets and related phenomena are studied for silicon crystals grown in the and directions,...
This paper reports the relationship between oxygen concentration and dislocation multiplication in s...