Add to ORKGpicture of valence band electron tunneling in a reversed bias p-n junction. Figure. 6: “rectangular junction ” approximation. Figure 7. “step junction ” approximation. Figure 8: Variation of BTBT current with substrate bias. (a) Comparison of analytical result with simulated data from MEDICI for N MOS transistor with Leff = 25nm and doping profile: αa=0.018µm, σay=0.016µm βa=0.016µm, σax=0.020µm. (b)Variation of error. Figure 9: Variation of BTBT current with substrate bias for different devices. Figure 10: Variation of subthreshold leakage with substrate bias (Vbs) and drain bias (Vds) for NMOS transisto
We present techniques to determine the optimal body bias (forward or reverse) to minimize leakage cu...
Aggressive scaling of CMOS circuits in recent times has lead to dramatic increase in leakage current...
A significantly increased subthreshold leakage is observed in devices with high-k gate dielectric du...
In this paper we have developed analytical models to estimate the mean and the standard deviation in...
Dramatic increase of subthreshold, gate and reverse biased junction band-to-band-tunneling (BTBT) le...
This paper underlines a closed form of MOSFET transistor’s leakage current mechanisms in the sub 100...
Abstract—In nanoscale complementary metal–oxide– semiconductor (CMOS) devices, a significant increas...
Junction leakage becomes more significant as metal-oxide-semiconductor (MOS) technologies scale down...
Static leakage currents represent a major issue in nano-scale CMOS. In digital VLSI circuits, the mo...
Because of the continued scaling of technology and supply-threshold voltage, leakage power has becom...
We present a phenomenological model for subsurface leakage current in MOSFETs biased in accumulation...
High leakage current in deep-submicrometer regimes is be-coming a significant contributor to power d...
Graduation date: 2005Recent trends in CMOS technology and scaling of devices clearly indicate that l...
the reversely biased PN junction the transistor Power dissipation becoming a limiting conducts even ...
The dominance of leakage currents in circuit design has been impelled by steady downscaling of MOSFE...
We present techniques to determine the optimal body bias (forward or reverse) to minimize leakage cu...
Aggressive scaling of CMOS circuits in recent times has lead to dramatic increase in leakage current...
A significantly increased subthreshold leakage is observed in devices with high-k gate dielectric du...
In this paper we have developed analytical models to estimate the mean and the standard deviation in...
Dramatic increase of subthreshold, gate and reverse biased junction band-to-band-tunneling (BTBT) le...
This paper underlines a closed form of MOSFET transistor’s leakage current mechanisms in the sub 100...
Abstract—In nanoscale complementary metal–oxide– semiconductor (CMOS) devices, a significant increas...
Junction leakage becomes more significant as metal-oxide-semiconductor (MOS) technologies scale down...
Static leakage currents represent a major issue in nano-scale CMOS. In digital VLSI circuits, the mo...
Because of the continued scaling of technology and supply-threshold voltage, leakage power has becom...
We present a phenomenological model for subsurface leakage current in MOSFETs biased in accumulation...
High leakage current in deep-submicrometer regimes is be-coming a significant contributor to power d...
Graduation date: 2005Recent trends in CMOS technology and scaling of devices clearly indicate that l...
the reversely biased PN junction the transistor Power dissipation becoming a limiting conducts even ...
The dominance of leakage currents in circuit design has been impelled by steady downscaling of MOSFE...
We present techniques to determine the optimal body bias (forward or reverse) to minimize leakage cu...
Aggressive scaling of CMOS circuits in recent times has lead to dramatic increase in leakage current...
A significantly increased subthreshold leakage is observed in devices with high-k gate dielectric du...
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