We report the first large-scale synthesis of single crystal InSb nanowires using self-catalyzed vapor-liquid-solid (VLS) transport process. Narrow growth window for achieving single crystal InSb nanowires has been discovered. Our batch fabricated InSb nanowires are 50-180 nm in diameter and 10-30 µm in length. Materials composition analysis by Energy-Dispersive X-ray Spectroscopy (EDAX) reveals that the as-grown InSb nanowires are pure single crystals of InSb. Structural analysis by High Resolution Transmission Electron Microscopy (HRTEM) and Selected Area Electron Diffraction (SAED) reveals that InSb nanowires have cubic crystal structures. The nanowire growth direction is found to be [001], 45 degrees toward the lattice planes in cubic st...
We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InS...
III-Sb semiconductor nanowires have drawn a lot of attention because of their many promising applica...
We demonstrate the growth of InSb-based nanowire heterostructures by metalorganic vapour phase epita...
This article summarizes some of the critical features of pure indium antimonide nanowires (InSb NWs)...
Indium Antimonide (InSb) nanowires with a diameter ranging from 30 nm to 200 nm, were synthesized by...
High aspect-ratio InSb nanowires (NWs) of high chemical purity are sought for implementing advanced ...
Growth of high-quality single-crystalline InSb layers remains challenging in material science. Such ...
High aspect-ratio InSb nanowires (NWs) of high chemical purity are sought for implementing advanced ...
A novel approach to the synthesis of Mn-doped InSb nanowires is demonstrated in this work. We first ...
Growth of high-quality single-crystalline InSb layers remains challenging in material science. Such ...
A novel approach to the synthesis of Mn-doped InSb nanowires is demonstrated in this work. We first ...
Synthesis of InSb nanowires using a chemical vapor deposition technique, as a function of growth tem...
High aspect ratios are highly desired to fully exploit the one-dimensional properties of indium anti...
Although various synthesis and characterization strategies have been employed for the synthesis of c...
Indium Antimonide (InSb) is a semiconductor material with unique properties, that are suitable for s...
We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InS...
III-Sb semiconductor nanowires have drawn a lot of attention because of their many promising applica...
We demonstrate the growth of InSb-based nanowire heterostructures by metalorganic vapour phase epita...
This article summarizes some of the critical features of pure indium antimonide nanowires (InSb NWs)...
Indium Antimonide (InSb) nanowires with a diameter ranging from 30 nm to 200 nm, were synthesized by...
High aspect-ratio InSb nanowires (NWs) of high chemical purity are sought for implementing advanced ...
Growth of high-quality single-crystalline InSb layers remains challenging in material science. Such ...
High aspect-ratio InSb nanowires (NWs) of high chemical purity are sought for implementing advanced ...
A novel approach to the synthesis of Mn-doped InSb nanowires is demonstrated in this work. We first ...
Growth of high-quality single-crystalline InSb layers remains challenging in material science. Such ...
A novel approach to the synthesis of Mn-doped InSb nanowires is demonstrated in this work. We first ...
Synthesis of InSb nanowires using a chemical vapor deposition technique, as a function of growth tem...
High aspect ratios are highly desired to fully exploit the one-dimensional properties of indium anti...
Although various synthesis and characterization strategies have been employed for the synthesis of c...
Indium Antimonide (InSb) is a semiconductor material with unique properties, that are suitable for s...
We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InS...
III-Sb semiconductor nanowires have drawn a lot of attention because of their many promising applica...
We demonstrate the growth of InSb-based nanowire heterostructures by metalorganic vapour phase epita...