Abstract: Dil'lerent computational tools help to provide information on the sublimatio~i growth of Sic single crysials by the inotlified-Lely mcthod. Local thermodynamic equilibrium calculations coupled to heat and mass transfer can give valuable data on thc zrowth rate and the shape of the growing crystal. In this contribution, we focus on the influence of the overall Ar prcssurc in the growth cavity on the growing crystal shape for two different cavity geometries (with and without a screen next to thc sccd crystal) having similar temperatu1.e distributions. The results of this modelling will be compared to the experiments. 1
Using transient and stationary mathematical heat transfer models including heat conduction, radiatio...
Using a transient mathematical heat transfer model including heat conduction, radiation, and radio...
Using a transient mathematical heat transfer model including heat conduction, radiation, and radio f...
Different computational tools help to provide information on the sublimation growth of Sic single cr...
International audienceThe links between the occurrence of a given silicon carbide (SiC) polytype and...
Using transient and stationary mathematical heat transfer models including heat conduction, radiatio...
The numerous technical applications in electronic and optoelectronic devices, such as lasers, diodes...
The numerous technical applications in electronic and optoelectronic devices, such as lasers, diodes...
We present a transient model for the Modified Lely Method for the sublimation growth of SiC single c...
In this article, we use numerical simulation to investigate transient temperature phenomena during s...
The effects of various process variables on the formation of polytypes during SiC single crystal gro...
In this article, we use numerical simulation to investigate transient temperature phenomena during s...
We use a numerical optimization method to determine the control parameters frequency, power, and coi...
Using transient and stationary mathematical heat transfer models including heat conduction, radiatio...
We present numerical computations of the temperature fields in axisymmetric growth apparatus for sub...
Using transient and stationary mathematical heat transfer models including heat conduction, radiatio...
Using a transient mathematical heat transfer model including heat conduction, radiation, and radio...
Using a transient mathematical heat transfer model including heat conduction, radiation, and radio f...
Different computational tools help to provide information on the sublimation growth of Sic single cr...
International audienceThe links between the occurrence of a given silicon carbide (SiC) polytype and...
Using transient and stationary mathematical heat transfer models including heat conduction, radiatio...
The numerous technical applications in electronic and optoelectronic devices, such as lasers, diodes...
The numerous technical applications in electronic and optoelectronic devices, such as lasers, diodes...
We present a transient model for the Modified Lely Method for the sublimation growth of SiC single c...
In this article, we use numerical simulation to investigate transient temperature phenomena during s...
The effects of various process variables on the formation of polytypes during SiC single crystal gro...
In this article, we use numerical simulation to investigate transient temperature phenomena during s...
We use a numerical optimization method to determine the control parameters frequency, power, and coi...
Using transient and stationary mathematical heat transfer models including heat conduction, radiatio...
We present numerical computations of the temperature fields in axisymmetric growth apparatus for sub...
Using transient and stationary mathematical heat transfer models including heat conduction, radiatio...
Using a transient mathematical heat transfer model including heat conduction, radiation, and radio...
Using a transient mathematical heat transfer model including heat conduction, radiation, and radio f...
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