Part of the Electrical and Electronics Commons This document has been made available through Purdue e-Pubs, a service of the Purdue University Libraries. Please contact epubs@purdue.edu for additional information. Gilbert, P.V. and Neudeck, G.W., "Three-Dimensional Insulated Gate Bipolar Transistor (IGBT) Development " (1992). ECE Technica
IGBT (Insulated Gate Bipolar Junction) is the combination of MOSFET and BJT. It has low input impeda...
Contains table of contents for Part I, table of contents for Section 1, reports on fourteen research...
National audienceThis article deals with advanced gate drivers for MOSFET and IGBT power electronics...
Contains table of contents for Part III, table of contents for Section 1 and reports on nine researc...
The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance ...
This resource, by Tony R. Kuphaldt, is the third volume in a series of six online textbooks about e...
Description: Introduction to solid state electronics. Emphasis is on circuit design concepts with ex...
Abstract:- Power semiconductor devices are the key electronic components used in power electronic sy...
L'IGBT (Insulated Gate Bipolar Transistor) a pris une part importante dans les applications de l'éle...
Abstract — More than ten years have elapsed since IGBT modules first emerged as the preferred power ...
xxiii, 452 pages :Covers the "how" and "why" of the solution of problems in electronic and electrica...
L\u27IGBT (Insulated Gate Bipolar Transistor) a pris une part importante dans les applications de l\...
The in-depth analysis of the Semiconductor Power Electronics applications are essential for future d...
九州工業大学博士学位論文 学位記番号:工博甲第340号 学位授与年月日:平成24年9月30日1BACKGROUND||2 OBJECTIVE||3 STRUCTURE ORIENTED ANALYTI...
During the three decades spent, the advances of high voltage/current semiconductor technology direct...
IGBT (Insulated Gate Bipolar Junction) is the combination of MOSFET and BJT. It has low input impeda...
Contains table of contents for Part I, table of contents for Section 1, reports on fourteen research...
National audienceThis article deals with advanced gate drivers for MOSFET and IGBT power electronics...
Contains table of contents for Part III, table of contents for Section 1 and reports on nine researc...
The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance ...
This resource, by Tony R. Kuphaldt, is the third volume in a series of six online textbooks about e...
Description: Introduction to solid state electronics. Emphasis is on circuit design concepts with ex...
Abstract:- Power semiconductor devices are the key electronic components used in power electronic sy...
L'IGBT (Insulated Gate Bipolar Transistor) a pris une part importante dans les applications de l'éle...
Abstract — More than ten years have elapsed since IGBT modules first emerged as the preferred power ...
xxiii, 452 pages :Covers the "how" and "why" of the solution of problems in electronic and electrica...
L\u27IGBT (Insulated Gate Bipolar Transistor) a pris une part importante dans les applications de l\...
The in-depth analysis of the Semiconductor Power Electronics applications are essential for future d...
九州工業大学博士学位論文 学位記番号:工博甲第340号 学位授与年月日:平成24年9月30日1BACKGROUND||2 OBJECTIVE||3 STRUCTURE ORIENTED ANALYTI...
During the three decades spent, the advances of high voltage/current semiconductor technology direct...
IGBT (Insulated Gate Bipolar Junction) is the combination of MOSFET and BJT. It has low input impeda...
Contains table of contents for Part I, table of contents for Section 1, reports on fourteen research...
National audienceThis article deals with advanced gate drivers for MOSFET and IGBT power electronics...