Add to ORKGEtching rates of borosilicate, borophosphosilicate, phosphosilicate, and arsenosilicate glass films in various buffered hydrogen fluoride solution (BHF) have been studied. Etching rates were found to depend on the glass composition and dopant concentration as wel l as the concentration f ammonium fluoride in the BHF. This phenomenon is clearly differ-ent from the etching rate of thermal SiO2 oxide which is hardly affected by the concentration f ammonium fluoride in ex-cess of equimolar to the HF concentration. The etching rates of the doped films ay sometimes be higher than that of a nondoped SiO2 film but the rate is reduced when certain other dopants are present. This phenomenon is attributable to valence differences between silicon and t...
In both buffered (40 % NH4F) and unbuffered 0.49 % HF the thickness removed of undensified tetraethy...
The anhydrous HF vapor etching of sacrificial silicon dioxide films grown by plasma-enhanced and low...
The kinetics of the etching of silicon in the system HF, HNO~, and H~O was studied as a function of ...
The different equilibria in HF and HF /HCI solutions are examined and the etching reaction of S iQ i...
Increased etch rate for implanted oxide with boron, phosphorus, arsenic, and argon is characterized ...
The high selectivity in etching of dielectric films over crystalline silicon (c-Si) by hydrofluoric ...
During etching of a multicomponent glass in concentrated hydrofluoric acid (HF) solutions, a crust c...
A reliable low pressure vapor HF etch process was developed for the selective removal of phosphorus-...
Abstract. The etch rate of n-type Si in diluted HF solutions was investigated as a function of the b...
In this work a methodology and metrology for the Si substrate loss characterization during cleaning ...
The etching of sil icon in HNO3-HF based systems proceeds by a sequen-tial oxidation-followed-by-dis...
In this work a methodology and metrology for the substrate and dopant loss during cleaning and etchi...
The vapor-phase hydrogen fluoride etch of oxides and nitride of silicon have been studied. A new mod...
Graduation date: 1965Some important factors that affect the dimensional\ud control of oxide films on...
The etching rate of silicon in fluoride-containing solutions was found to show a remarkable pH depen...
In both buffered (40 % NH4F) and unbuffered 0.49 % HF the thickness removed of undensified tetraethy...
The anhydrous HF vapor etching of sacrificial silicon dioxide films grown by plasma-enhanced and low...
The kinetics of the etching of silicon in the system HF, HNO~, and H~O was studied as a function of ...
The different equilibria in HF and HF /HCI solutions are examined and the etching reaction of S iQ i...
Increased etch rate for implanted oxide with boron, phosphorus, arsenic, and argon is characterized ...
The high selectivity in etching of dielectric films over crystalline silicon (c-Si) by hydrofluoric ...
During etching of a multicomponent glass in concentrated hydrofluoric acid (HF) solutions, a crust c...
A reliable low pressure vapor HF etch process was developed for the selective removal of phosphorus-...
Abstract. The etch rate of n-type Si in diluted HF solutions was investigated as a function of the b...
In this work a methodology and metrology for the Si substrate loss characterization during cleaning ...
The etching of sil icon in HNO3-HF based systems proceeds by a sequen-tial oxidation-followed-by-dis...
In this work a methodology and metrology for the substrate and dopant loss during cleaning and etchi...
The vapor-phase hydrogen fluoride etch of oxides and nitride of silicon have been studied. A new mod...
Graduation date: 1965Some important factors that affect the dimensional\ud control of oxide films on...
The etching rate of silicon in fluoride-containing solutions was found to show a remarkable pH depen...
In both buffered (40 % NH4F) and unbuffered 0.49 % HF the thickness removed of undensified tetraethy...
The anhydrous HF vapor etching of sacrificial silicon dioxide films grown by plasma-enhanced and low...
The kinetics of the etching of silicon in the system HF, HNO~, and H~O was studied as a function of ...