Add to ORKGIsolation (STI) gap-fill process shows some filling limitations due to voids formation in the oxide layer (SiO2), leading to electrical isolation trouble. In this paper, a new gap-fill strategy called L-E-G (for Liner – Etch-back – Gap-fill) is presented. This strategy is based on an innovative etch-back step, using downstream plasma, which allows liner profile reshaping and improves the slope in trenches. First, the etch-back process on blanket wafers is studied. A slowdown phenomenon of the etch rate with plasma exposure time is observed. Then, the relation between plasma conditions and liner profile reshaping is established. Finally, the L-E-G strategy is applied on 28 nm technology wafers. Successful STI void-free is obtained
Heterogeneous integration of III-V semiconductors on Si substrate has been attracting much attention...
Deep trenches are playing a key role in VLSI circuits both for isolation and for DRAM capacitor cell...
This paper proposes a review of the various consequences of the Shallow Trench Isolation (STI) oxide...
Achieved at the beginning of the integrated circuits manufacturing, shallow trench isolation permits...
Shallow trench isolation (STI) is the mainstream CMOS isolation technology. It uses chemical mechani...
Réalisées au début du processus de fabrication des circuits intégrés, les tranchées d'isolation perm...
Shallow Trench Isolation (STI) holds many advantages to that of its predecessor isolation technology...
Shallow Trench Isolation(STI) is widely used in advanced CMOS technologies. This paper describes a s...
Shallow trench isolation (STI) planarized with chemical mechanical polishing (CMP) has replaced loca...
A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethox...
This paper presents a shallow trench isolation technique using plasma etching, LPCVD oxide fill, and...
A silicon trench 2um deep was etched in a PlasmaTherm 2406 RIE tool using an SF6/C02 chemistry with ...
Shallow trench isolation (STI) planarized with chemical mechanical polishing (CMP) has replaced LOCO...
As the IC industry progresses through each successive technology node on the ITRS roadmap, to contin...
In this paper, we report on results of an intensive study, which has been performed to understand an...
Heterogeneous integration of III-V semiconductors on Si substrate has been attracting much attention...
Deep trenches are playing a key role in VLSI circuits both for isolation and for DRAM capacitor cell...
This paper proposes a review of the various consequences of the Shallow Trench Isolation (STI) oxide...
Achieved at the beginning of the integrated circuits manufacturing, shallow trench isolation permits...
Shallow trench isolation (STI) is the mainstream CMOS isolation technology. It uses chemical mechani...
Réalisées au début du processus de fabrication des circuits intégrés, les tranchées d'isolation perm...
Shallow Trench Isolation (STI) holds many advantages to that of its predecessor isolation technology...
Shallow Trench Isolation(STI) is widely used in advanced CMOS technologies. This paper describes a s...
Shallow trench isolation (STI) planarized with chemical mechanical polishing (CMP) has replaced loca...
A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethox...
This paper presents a shallow trench isolation technique using plasma etching, LPCVD oxide fill, and...
A silicon trench 2um deep was etched in a PlasmaTherm 2406 RIE tool using an SF6/C02 chemistry with ...
Shallow trench isolation (STI) planarized with chemical mechanical polishing (CMP) has replaced LOCO...
As the IC industry progresses through each successive technology node on the ITRS roadmap, to contin...
In this paper, we report on results of an intensive study, which has been performed to understand an...
Heterogeneous integration of III-V semiconductors on Si substrate has been attracting much attention...
Deep trenches are playing a key role in VLSI circuits both for isolation and for DRAM capacitor cell...
This paper proposes a review of the various consequences of the Shallow Trench Isolation (STI) oxide...