Add to ORKGFor both hydrophilic and hydrophobic surface preparation, using the combination of advanced surface treatment and tuned annealing process, void free Si/Si direct bonding have been successfully obtained. The pre-bonding procedure involves only low temperature (<500°C) treatment in order to be compatible with the low thermal budget requirement of some applications. The defectivity has been check using acoustic microscopy over all the interesting temperature range (RT-1100°C) for 4' ' silicon wafers
The use of H<sub>2</sub>SO<sub>4</sub>-H<sub>2</sub>O<sub>2</sub>-HF (SPFM) at low HF concentrations...
Direct wafer bonding is a “simple ” method of directly connecting wafers, with suitable (in terms of...
The breakthrough of directwafer bondingwas achieved with siliconon-insulator (SOI) allowing for high...
Silicon/silicon interfaces were prepared by wafer bonding using the silicon-to-silicon direct bondin...
Silicon/silicon interfaces were prepared by wafer bonding using the silicon-to-silicon direct bondin...
This paper is focused on a modified process for silicon direct bonding. Thin intermediate sodium sti...
This paper presents results of investigations of defect formation during annealing of silicon wafer ...
Wafer direct bonding is an attractive approach to manufacture future micro-electro-mechanical system...
In this paper a new class of modified silicon direct bonding processes is presented. The new process...
This chapter provides an explanation to Silicon Direct Bonding. Direct bonding generally means joini...
The objective is to investigate plasma assisted bonding processes having the potential of forming ox...
Hydrophilic silicon surfaces become hydrophobic without microroughening after 2 00°C low energy hydr...
This paper describes the development of two bonding techniques for structured silicon wafer pairs. T...
Using an original and dynamic crack-opening method the distribution of surface energy values is anal...
A novel wafer bonding technology, designed to enable covalent and conductive wafer bonding processes...
The use of H<sub>2</sub>SO<sub>4</sub>-H<sub>2</sub>O<sub>2</sub>-HF (SPFM) at low HF concentrations...
Direct wafer bonding is a “simple ” method of directly connecting wafers, with suitable (in terms of...
The breakthrough of directwafer bondingwas achieved with siliconon-insulator (SOI) allowing for high...
Silicon/silicon interfaces were prepared by wafer bonding using the silicon-to-silicon direct bondin...
Silicon/silicon interfaces were prepared by wafer bonding using the silicon-to-silicon direct bondin...
This paper is focused on a modified process for silicon direct bonding. Thin intermediate sodium sti...
This paper presents results of investigations of defect formation during annealing of silicon wafer ...
Wafer direct bonding is an attractive approach to manufacture future micro-electro-mechanical system...
In this paper a new class of modified silicon direct bonding processes is presented. The new process...
This chapter provides an explanation to Silicon Direct Bonding. Direct bonding generally means joini...
The objective is to investigate plasma assisted bonding processes having the potential of forming ox...
Hydrophilic silicon surfaces become hydrophobic without microroughening after 2 00°C low energy hydr...
This paper describes the development of two bonding techniques for structured silicon wafer pairs. T...
Using an original and dynamic crack-opening method the distribution of surface energy values is anal...
A novel wafer bonding technology, designed to enable covalent and conductive wafer bonding processes...
The use of H<sub>2</sub>SO<sub>4</sub>-H<sub>2</sub>O<sub>2</sub>-HF (SPFM) at low HF concentrations...
Direct wafer bonding is a “simple ” method of directly connecting wafers, with suitable (in terms of...
The breakthrough of directwafer bondingwas achieved with siliconon-insulator (SOI) allowing for high...