A pH sensor on an AlGaN/GaN heterostructure with different surface conditions was developed and evaluated. The average sensitivity is 49.5, 47.2 and 51.8 mV/pH, respectively, for samples with i-GaN, p-GaN and n-GaN cap layers on the AlGaN surface. The average sensitivity is 52.9, 53.5, 54.1, and 55.2 mV/pH, respectively, for the samples with an AlGaN surface and Al composition of 22%, 24%, 25%, and 35%. The sensitivity of the pH sensor on AlGaN/GaN heterostructure increases if the AlGaN surface is adopted and increases with increasing aluminum composition
Gallium nitride (GaN) is a material with remarkable properties, including wide band gap, direct ligh...
We have studied current versus voltage characteristics of n-GaN∕u-AlGaN∕n-GaN double heterostructure...
In this work, an all-solid-state electrolyte insulator-semiconductor (EIS) device is developed for p...
We have investigated the pH and ion sensitivity of AlGaN/GaN heterostructure devices; these devices ...
The AlInN/GaN high-electron-mobility-transistor (HEMT) indicates better performances compared with t...
In the paper, the behavior of AlGaN/GaN HEMT-type heterostructures in a water solution of (KOH + HCl...
Soft X-ray photoelectron spectroscopy was used to investigate the fundamental surface chemistry of b...
The CIP stability of pH sensitive ion-sensitive field-effect transistors based on AlGaN/GaN heterost...
The InN/GaN heterostructure with high sheet electron concentration was utilized to fabricate the ion...
The pH response of GaN/AlInN/AlN/GaN ion-sensitive field effect transistor (ISFET) on Si substrates ...
Gallium nitride is considered as the most promising material for liquid-phase sensor applications du...
In this paper, we fabricated an AlGaN/GaN high electron mobility transistor (HEMT) pH sensor with an...
Gallium nitride with wurtzite crystal structure is a chemically stable semiconductor with high inter...
Sensing responses of an open-gate liquid-phase sensor fabricated on undoped-AlGaN/GaN high-electron-...
Gallium nitride (GaN) is a material with remarkable properties, including wide band gap, direct ligh...
Gallium nitride (GaN) is a material with remarkable properties, including wide band gap, direct ligh...
We have studied current versus voltage characteristics of n-GaN∕u-AlGaN∕n-GaN double heterostructure...
In this work, an all-solid-state electrolyte insulator-semiconductor (EIS) device is developed for p...
We have investigated the pH and ion sensitivity of AlGaN/GaN heterostructure devices; these devices ...
The AlInN/GaN high-electron-mobility-transistor (HEMT) indicates better performances compared with t...
In the paper, the behavior of AlGaN/GaN HEMT-type heterostructures in a water solution of (KOH + HCl...
Soft X-ray photoelectron spectroscopy was used to investigate the fundamental surface chemistry of b...
The CIP stability of pH sensitive ion-sensitive field-effect transistors based on AlGaN/GaN heterost...
The InN/GaN heterostructure with high sheet electron concentration was utilized to fabricate the ion...
The pH response of GaN/AlInN/AlN/GaN ion-sensitive field effect transistor (ISFET) on Si substrates ...
Gallium nitride is considered as the most promising material for liquid-phase sensor applications du...
In this paper, we fabricated an AlGaN/GaN high electron mobility transistor (HEMT) pH sensor with an...
Gallium nitride with wurtzite crystal structure is a chemically stable semiconductor with high inter...
Sensing responses of an open-gate liquid-phase sensor fabricated on undoped-AlGaN/GaN high-electron-...
Gallium nitride (GaN) is a material with remarkable properties, including wide band gap, direct ligh...
Gallium nitride (GaN) is a material with remarkable properties, including wide band gap, direct ligh...
We have studied current versus voltage characteristics of n-GaN∕u-AlGaN∕n-GaN double heterostructure...
In this work, an all-solid-state electrolyte insulator-semiconductor (EIS) device is developed for p...