Abstract—ZnO has gained considerable interest recently as a promising material for a variety of applications. To a large extent, the renewed interest in ZnO is fuelled by its wide direct band gap (3.3 eV at room temperature) and large exciton binding energy (60 meV) making this material, when alloyed with e.g. Cd and Mg, especially attractive for light emitters in the blue/UV spectral region. Unfortunately, as with other wide-gap semiconductors, ZnO suffers from the doping asymmetry problem, in that the n-type conductivity can be obtained rather easily, but p-type doping proved to be a formidable challenge. This doping asymmetry problem (also dubbed as the p-type problem in ZnO) is preventing applications of ZnO in light-emitting diodes and...
P doped ZnO films were grown on quartz by radio frequency-magnetron sputtering method using a ZnO ta...
This journal vol. entitled: International Workshop on Positron Studies of Defects (PSD 08), 1–5 Sept...
The worldwide problem of p-type doping in ZnO is investigated based on first-principles calculations...
Abstract—ZnO has gained considerable interest recently as a promising material for a variety of appl...
ZnO has ideal qualities for bright, efficient UV light emitting diodes and laser diodes, based on p-...
This chapter deals with a critical review on p-type doping of ZnO. In the past 15 year...
Zinc Oxide falls under the classification of transparent conductive oxides. They typical optical tra...
ZnO is a wide-band-gap semiconductor material that is now being developed for many applications, inc...
Both n-type and p-type ZnO will be required for development of homojunction light-emitting diodes (L...
Advancements in ZnO device applications have fostered much interest in the electrical and optical ac...
Conference Theme: Co-creating Dream of SmartnessZnO is a wide band gap semiconductor having excellen...
Abstract. Due to its high radiative stability and superior optoelectronic properties, such as wide d...
Research activity on ZnO has increased over the past few years, with particular interest in potentia...
Zinc oxide is a direct wide band gap material having excellent optical properties. It has attracted...
ZnO is a wide bandgap semiconductor material with numerous present applications, such as varistors a...
P doped ZnO films were grown on quartz by radio frequency-magnetron sputtering method using a ZnO ta...
This journal vol. entitled: International Workshop on Positron Studies of Defects (PSD 08), 1–5 Sept...
The worldwide problem of p-type doping in ZnO is investigated based on first-principles calculations...
Abstract—ZnO has gained considerable interest recently as a promising material for a variety of appl...
ZnO has ideal qualities for bright, efficient UV light emitting diodes and laser diodes, based on p-...
This chapter deals with a critical review on p-type doping of ZnO. In the past 15 year...
Zinc Oxide falls under the classification of transparent conductive oxides. They typical optical tra...
ZnO is a wide-band-gap semiconductor material that is now being developed for many applications, inc...
Both n-type and p-type ZnO will be required for development of homojunction light-emitting diodes (L...
Advancements in ZnO device applications have fostered much interest in the electrical and optical ac...
Conference Theme: Co-creating Dream of SmartnessZnO is a wide band gap semiconductor having excellen...
Abstract. Due to its high radiative stability and superior optoelectronic properties, such as wide d...
Research activity on ZnO has increased over the past few years, with particular interest in potentia...
Zinc oxide is a direct wide band gap material having excellent optical properties. It has attracted...
ZnO is a wide bandgap semiconductor material with numerous present applications, such as varistors a...
P doped ZnO films were grown on quartz by radio frequency-magnetron sputtering method using a ZnO ta...
This journal vol. entitled: International Workshop on Positron Studies of Defects (PSD 08), 1–5 Sept...
The worldwide problem of p-type doping in ZnO is investigated based on first-principles calculations...