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This dissertation describes the deposition and characterization ofan amorphous thin film with a composition near that ofCuInSe2 (CIS). The creation ofan amorphous intermediate leads to a crystalline film at low annealing temperatures. Thin films were deposited from elemental sources in a custom built high vacuum chamber. Copper-selenium and indium-selenium binary layered samples were investigated to identitY interfacial reactions that would form undesired binary intermediate compounds resulting in the need for high temperature annealing. Although the indium selenium system did not form interfacial compounds on deposit. indium crystallized when the indium layer thickness exceeded 15 angstroms. disrupting the continuity of the elemental layers. Copper-selenium elemental layers with a repeat thickness ofover 30 angstroms or compositions with less than 63 % selenium formed CuSe on deposit.-----------_._._-----_._---------- v Several deposition schemes were investigated to identify the proper deposition pattern and thicknesses to fonn the CIS amorphous film. Simple co-deposition resulte