Add to ORKGAbstract: A thorough investigation of hot-carrier-induced degradation in deep submicron N-and P-channel Unibond MOSFETs is presented in a wide range of temperature. The variations of the maximal transconductance, threshold voltage and drain current are addressed. Some recovery effects are also outlined for N-channel device. 1
The bias dependence of Channel Hot Carrier (CHC)degradation in 0.18μm SOI pMOSFETs is investigated i...
One of the main problems encountered when scaling down is the hot carrier induced degradation of MOS...
One of the main problems encountered when scaling down is the hot carrier induced degradation of MOS...
A thorough investigation of hot-carrier-induced degradation in deep submicron N-and P-channel Unibon...
A thorough investigation of hot-carrier-induced degradation in deep submicron N-and P-channel Unibon...
International audienceThe transistor performances and hot-carrier reliability in n-MOSFETs are inves...
International audienceThe transistor performances and hot-carrier reliability in n-MOSFETs are inves...
Hot-carrier effects were studied in body-tied Partially Depleted SOI MOSFETs in a wide range of temp...
The variations of the substrate current and the impact ionization rate in MOS transistors are invest...
Modeling of channel hot carrier and negative bias temperature instability effects in p-MOSFETs is de...
In this present communication, we have studied the effect of hot-carrier degradation effects on sur...
In this present communication, we have studied the effect of hot-carrier degradation effects on sur...
The bias dependence of Channel Hot Carrier (CHC) degradation in 0.18 mu m SOT pMOSFETs is investigat...
Hot-carrier effects of p-MOSFETs with different oxide-thicknesses are studied in low gate voltage ra...
In this paper the degradation in the drain current and threshold voltage of the N-MOS transistors ar...
The bias dependence of Channel Hot Carrier (CHC)degradation in 0.18μm SOI pMOSFETs is investigated i...
One of the main problems encountered when scaling down is the hot carrier induced degradation of MOS...
One of the main problems encountered when scaling down is the hot carrier induced degradation of MOS...
A thorough investigation of hot-carrier-induced degradation in deep submicron N-and P-channel Unibon...
A thorough investigation of hot-carrier-induced degradation in deep submicron N-and P-channel Unibon...
International audienceThe transistor performances and hot-carrier reliability in n-MOSFETs are inves...
International audienceThe transistor performances and hot-carrier reliability in n-MOSFETs are inves...
Hot-carrier effects were studied in body-tied Partially Depleted SOI MOSFETs in a wide range of temp...
The variations of the substrate current and the impact ionization rate in MOS transistors are invest...
Modeling of channel hot carrier and negative bias temperature instability effects in p-MOSFETs is de...
In this present communication, we have studied the effect of hot-carrier degradation effects on sur...
In this present communication, we have studied the effect of hot-carrier degradation effects on sur...
The bias dependence of Channel Hot Carrier (CHC) degradation in 0.18 mu m SOT pMOSFETs is investigat...
Hot-carrier effects of p-MOSFETs with different oxide-thicknesses are studied in low gate voltage ra...
In this paper the degradation in the drain current and threshold voltage of the N-MOS transistors ar...
The bias dependence of Channel Hot Carrier (CHC)degradation in 0.18μm SOI pMOSFETs is investigated i...
One of the main problems encountered when scaling down is the hot carrier induced degradation of MOS...
One of the main problems encountered when scaling down is the hot carrier induced degradation of MOS...