, T. Watanabe

The electric conduction mechanism of electrochemically treated anodic aluminum oxide (AAO) resistance switching (RS) memory is investigated. The current-voltage characteristics of the AAO were measured for both of high resistance state and low resistant state at room temperature. The conduction mechanism of a high resistance state can be explained by separating into three regions of ohmic conduction, space charge limited current (SCLC), and Fowler-Nordheim (F-N) tunneling. It was suggested that the F-N tunneling deteriorates the reproducibility of switching voltages