Two explanations are given for the Meyer-Neldel rule in inorganic semiconductors. First it is shown that the freezing-in of donor acceptor-type defects can lead to this rule both for band conductors and for small-polaron hopping conductors. Next it is shown that a Gaussian distribution of defect energy levels or a Gaussian distribution of hopping energies, under specific conditions of defect interactions, can also lead to this rule. As an example of a small-polaron hopping conductor experimental results are described of conductivity measurements on a vanadium garnet single crystal. The first-mentioned model leads to a freezing-in temperature which corresponds well with the value known from other experiments. 0 1984 Academic Press, Inc. 1. I...
The Meyer-Neldel (MN) compensation rule, implying an exponential increase in the prefactor with incr...
We have extended an effective medium approximation theory [Fishchuk, Kadashchuk, Genoe, Ullah, Sitte...
We analyzed the temperature dependence of the forward current of a silicon diode. Instead of represe...
It is shown that whenever traps, distributed exponentially in energy, are governing the conduction i...
In general, in case of semiconductors, conductivity (σ) varies exponentially with temperature (T), i...
The temperature-activated charge transport in disordered organic semiconductors at large carrier con...
The Meyer-Neldel rule (MNR) has been observed in recent calculations of the electrical conductivity ...
Temperature-activated charge transport in disordered organic semiconductors at large carrier concent...
Electrical conductivity was performed on amorphous thin films of Ge1–xSe2Pbx (with x = 0, 0.2, 0.4,...
In general, in case of semiconductors, conductivity (σ) varies exponentially with temperature (T), i...
Electric charge transport is an essential process for all electrical and electrochemical energy syst...
We show that a Meyer-Neldel (MN) regime, usually reported for disordered materials, is found in stat...
Electrical conductivity, σ(T ), of a-Ge3Nx (3.7 < x < 4.6) and quasi-stoichiometric a-Ge2OyNx films ...
For nondegenerate bulk semiconductors, we have used the virial theorem to derive an expression for t...
935-938In many amorphous and liquid semiconductors and other class of materials, Meyer-Neldel rule ...
The Meyer-Neldel (MN) compensation rule, implying an exponential increase in the prefactor with incr...
We have extended an effective medium approximation theory [Fishchuk, Kadashchuk, Genoe, Ullah, Sitte...
We analyzed the temperature dependence of the forward current of a silicon diode. Instead of represe...
It is shown that whenever traps, distributed exponentially in energy, are governing the conduction i...
In general, in case of semiconductors, conductivity (σ) varies exponentially with temperature (T), i...
The temperature-activated charge transport in disordered organic semiconductors at large carrier con...
The Meyer-Neldel rule (MNR) has been observed in recent calculations of the electrical conductivity ...
Temperature-activated charge transport in disordered organic semiconductors at large carrier concent...
Electrical conductivity was performed on amorphous thin films of Ge1–xSe2Pbx (with x = 0, 0.2, 0.4,...
In general, in case of semiconductors, conductivity (σ) varies exponentially with temperature (T), i...
Electric charge transport is an essential process for all electrical and electrochemical energy syst...
We show that a Meyer-Neldel (MN) regime, usually reported for disordered materials, is found in stat...
Electrical conductivity, σ(T ), of a-Ge3Nx (3.7 < x < 4.6) and quasi-stoichiometric a-Ge2OyNx films ...
For nondegenerate bulk semiconductors, we have used the virial theorem to derive an expression for t...
935-938In many amorphous and liquid semiconductors and other class of materials, Meyer-Neldel rule ...
The Meyer-Neldel (MN) compensation rule, implying an exponential increase in the prefactor with incr...
We have extended an effective medium approximation theory [Fishchuk, Kadashchuk, Genoe, Ullah, Sitte...
We analyzed the temperature dependence of the forward current of a silicon diode. Instead of represe...