Recently, we have demonstrated internal net gain with a bandwidth of 80 nm (1500 – 1580 nm) and 1533 nm peak gain of 2.0 dB/cm in Al2O3:Er3+ channel waveguides which were sputtered on silicon substrates and subsequently reactive ion etched. Based on measured spectroscopic parameters, rate-equation simulations predict gain of> 20 dB throughout the entire telecom C-band for optimized waveguide lengths. Data transmission of 40 Gbit/s has been obtained. Grating structures for on-chip integrated cavities and distributed-feedback lasers have been fabricated in this material and are currently under investigation
The increasing need for more efficient communication networks has been the main driving force for th...
Miniaturization and on-chip integration of high-performance light sources have become major issues f...
Al2O3:Er3+ thin films were deposited on Si wafers and subsequently structured. On-chip devices such ...
Recently, we have demonstrated internal net gain with a bandwidth of 80 nm (1500 - 1580 nm) and 1533...
Erbium-doped aluminum oxide channel waveguides were fabricated on silicon substrates and their chara...
Thin layers of Al2O3:Er3+ were reactively co-sputtered onto thermally oxidized silicon wafers and mi...
This thesis revolves around the development of fabrication technologies for $Al_2O_3:Er^{3+}$ wavegu...
Er concentration, energy-transfer upconversion and gain were investigated in Er-doped aluminum oxide...
Growth of reactively co-sputtered $Al_2O_3$ layers and micro-structuring using reactive ion etching ...
We report optical amplification in Al2O3:Er3+ with a gain bandwidth of 80 nm and peak gain of 2.0 dB...
Erbium-doped aluminum oxide amplifiers with varying erbium concentration have been fabricated on the...
A 4 cm long Er-doped Al/sub 2/O/sub 3/ spiral waveguide amplifier was fabricated on a Si substrate, ...
Integrated rare-earth-ion-doped dielectric lasers have found numerous applications in the medical, s...
Deposition and micro-structuring of $Al_2O_3:Er$ layers with low background losses (0.11 dB/cm) and ...
Reactive co-sputtering has been applied as a low-cost method for deposition of $Al_2O_3:Er^{3+}$ lay...
The increasing need for more efficient communication networks has been the main driving force for th...
Miniaturization and on-chip integration of high-performance light sources have become major issues f...
Al2O3:Er3+ thin films were deposited on Si wafers and subsequently structured. On-chip devices such ...
Recently, we have demonstrated internal net gain with a bandwidth of 80 nm (1500 - 1580 nm) and 1533...
Erbium-doped aluminum oxide channel waveguides were fabricated on silicon substrates and their chara...
Thin layers of Al2O3:Er3+ were reactively co-sputtered onto thermally oxidized silicon wafers and mi...
This thesis revolves around the development of fabrication technologies for $Al_2O_3:Er^{3+}$ wavegu...
Er concentration, energy-transfer upconversion and gain were investigated in Er-doped aluminum oxide...
Growth of reactively co-sputtered $Al_2O_3$ layers and micro-structuring using reactive ion etching ...
We report optical amplification in Al2O3:Er3+ with a gain bandwidth of 80 nm and peak gain of 2.0 dB...
Erbium-doped aluminum oxide amplifiers with varying erbium concentration have been fabricated on the...
A 4 cm long Er-doped Al/sub 2/O/sub 3/ spiral waveguide amplifier was fabricated on a Si substrate, ...
Integrated rare-earth-ion-doped dielectric lasers have found numerous applications in the medical, s...
Deposition and micro-structuring of $Al_2O_3:Er$ layers with low background losses (0.11 dB/cm) and ...
Reactive co-sputtering has been applied as a low-cost method for deposition of $Al_2O_3:Er^{3+}$ lay...
The increasing need for more efficient communication networks has been the main driving force for th...
Miniaturization and on-chip integration of high-performance light sources have become major issues f...
Al2O3:Er3+ thin films were deposited on Si wafers and subsequently structured. On-chip devices such ...