Effect of Fast Cooling on Diffusion-Induced Imperfections in Silicon

Misfit dislocations in phosphorus-diffused silicon are shown to suffer rear-rangement on fast cooling. These dislocations extend in specific directions and act as centers of phosphorus precipitates. There are also other areas of pre-cipitation where the particles are of irregular shape and size. The motion of dislocation network in the depths of the diffusion profile is mainly by glide, although a less dominant climb motion is observed. The generation of misfit dislocations in silicon by solute concentration gradients imposed by diffusion of large dopant concentration has been demonstrated by the observation of etch pits (1) and slip lines revealed by chemical etching (2), x- ray microscopy (3), and the electron probe (4). Formation of dislocation etworks on (111) orientation Si was reported by Jaccodine (5) and was later supported by the authors (6) in mor