The growth of Fe nanoclusters on the Ge(001) surface has been studied using low-temperature scanning tunnelling microscopy (STM) and density functional theory (DFT) calculations. STM results indicate that Fe nucleates on the Ge(001) surface, forming well-ordered nanoclusters of uniform size. Depending on the preparation conditions, two types of nanoclusters were observed having either four or sixteen Fe atoms within a nanocluster. The results were confirmed by DFT calculations. Annealing the nanoclusters at 420 K leads to the formation of nanorow structures, due to cluster mobility at such temperature. The Fe nanoclusters and nanorow structures formed on the Ge(001) surface show a superparamagnetic behaviour as measured by X-ray magnetic ci...
The deposition of small amounts of Pt on a Ge(001) surface gives rise to the formation of monatomic ...
Nanoscale clusters are often formed during heteroepitaxial crystal growth. Misfit between the lattic...
Ge nanostructures grown by molecular beam epitaxy on a vicinal Si(111) surface with atomically well-...
The growth of Fe nanoclusters on the Ge(001) surface has been studied using low-temperature scanning...
The growth of Fe nanoclusters on the Ge(001) and MoO2/Mo(110) surfaces has been studied using low-te...
Nanowire (NW) arrays form spontaneously after high temperature annealing of a sub monolayer depositi...
We study formation of the nanowires formed after deposition of Pt on a Ge(001) surface. The nanowire...
Nanoscale hut clusters formed on Ge(001) surfaces by depositing one monolayer of indium and annealin...
Nanoscale hut clusters formed on Ge(001) surfaces by depositing one monolayer of indium and annealin...
Pt deposited onto a Ge(001) surface gives rise to the spontaneous formation of atomic nanowires on a...
The initial stages of room temperature homoepitaxial growth of Ge(001) have been studied with scanni...
Pt deposited onto a Ge(001) surface gives rise to the spontaneous formation of atomic nanowires on a...
Pt deposited onto a Ge(001) surface gives rise to the spontaneous formation of atomic nanowires on a...
Pt deposited onto a Ge(001) surface gives rise to the spontaneous formation of atomic nanowires on a...
The deposition of small amounts of Pt on a Ge(001) surface gives rise to the formation of monatomic ...
The deposition of small amounts of Pt on a Ge(001) surface gives rise to the formation of monatomic ...
Nanoscale clusters are often formed during heteroepitaxial crystal growth. Misfit between the lattic...
Ge nanostructures grown by molecular beam epitaxy on a vicinal Si(111) surface with atomically well-...
The growth of Fe nanoclusters on the Ge(001) surface has been studied using low-temperature scanning...
The growth of Fe nanoclusters on the Ge(001) and MoO2/Mo(110) surfaces has been studied using low-te...
Nanowire (NW) arrays form spontaneously after high temperature annealing of a sub monolayer depositi...
We study formation of the nanowires formed after deposition of Pt on a Ge(001) surface. The nanowire...
Nanoscale hut clusters formed on Ge(001) surfaces by depositing one monolayer of indium and annealin...
Nanoscale hut clusters formed on Ge(001) surfaces by depositing one monolayer of indium and annealin...
Pt deposited onto a Ge(001) surface gives rise to the spontaneous formation of atomic nanowires on a...
The initial stages of room temperature homoepitaxial growth of Ge(001) have been studied with scanni...
Pt deposited onto a Ge(001) surface gives rise to the spontaneous formation of atomic nanowires on a...
Pt deposited onto a Ge(001) surface gives rise to the spontaneous formation of atomic nanowires on a...
Pt deposited onto a Ge(001) surface gives rise to the spontaneous formation of atomic nanowires on a...
The deposition of small amounts of Pt on a Ge(001) surface gives rise to the formation of monatomic ...
The deposition of small amounts of Pt on a Ge(001) surface gives rise to the formation of monatomic ...
Nanoscale clusters are often formed during heteroepitaxial crystal growth. Misfit between the lattic...
Ge nanostructures grown by molecular beam epitaxy on a vicinal Si(111) surface with atomically well-...