Silicon carbide (SiC) has various useful properties, such as wide band gap and high breakdown voltage. However, due to its chemically and mechanically stable nature, the preparation of a SiC wafer is very difficult
For the emerging semiconductor material silicon carbide (SiC) used in high power devices, chemical v...
Silicon Carbide has been a semiconductor material of interest as a high power and temperature replac...
By carefully controlling the surface chemistry of the chemical vapor deposition process for silicon ...
Dry etching of 4H-silicon carbide (SiC) is studied using chlorine trifluoride gas at 673-973K and at...
Etch rates of polycrystalline beta-silicon carbide (SiC) substrate in a wide range from less than on...
Research and development in semiconducting silicon carbide (SiC) technology has produced signifi-can...
Inductively coupled Cl2/Ar plasma etching of 4H–SiC has been studied. The SiC etch rate has been inv...
Deep Reactive Ion Etching (DRIE) of 4H-SiC performed using SF6/O2 plasma. The etching rates investig...
In order to develop the in situ cleaning process using chlorine trifluoride gas for a silicon carbid...
The etch rate of 4H-SiC in a SF6 helicon plasma has been investigated as a function of pressure, pow...
A number of different plasma chemistries, including NF{sub 3}/O{sub 2}, SF{sub 6}/O{sub 2}, SF{sub 6...
Silicon Carbide (SiC) is an exciting material that is growing in popularity for having qualities tha...
4H silicon carbide (SiC) substrates were dry etched in an inductively coupled plasma (ICP) system, u...
In this paper a reactive ion etching process on amorphous silicon carbide (a-SiC) films is character...
An inductively coupled plasma (ICP) system has been used to dry etch 4H silicon carbide (SiC) substr...
For the emerging semiconductor material silicon carbide (SiC) used in high power devices, chemical v...
Silicon Carbide has been a semiconductor material of interest as a high power and temperature replac...
By carefully controlling the surface chemistry of the chemical vapor deposition process for silicon ...
Dry etching of 4H-silicon carbide (SiC) is studied using chlorine trifluoride gas at 673-973K and at...
Etch rates of polycrystalline beta-silicon carbide (SiC) substrate in a wide range from less than on...
Research and development in semiconducting silicon carbide (SiC) technology has produced signifi-can...
Inductively coupled Cl2/Ar plasma etching of 4H–SiC has been studied. The SiC etch rate has been inv...
Deep Reactive Ion Etching (DRIE) of 4H-SiC performed using SF6/O2 plasma. The etching rates investig...
In order to develop the in situ cleaning process using chlorine trifluoride gas for a silicon carbid...
The etch rate of 4H-SiC in a SF6 helicon plasma has been investigated as a function of pressure, pow...
A number of different plasma chemistries, including NF{sub 3}/O{sub 2}, SF{sub 6}/O{sub 2}, SF{sub 6...
Silicon Carbide (SiC) is an exciting material that is growing in popularity for having qualities tha...
4H silicon carbide (SiC) substrates were dry etched in an inductively coupled plasma (ICP) system, u...
In this paper a reactive ion etching process on amorphous silicon carbide (a-SiC) films is character...
An inductively coupled plasma (ICP) system has been used to dry etch 4H silicon carbide (SiC) substr...
For the emerging semiconductor material silicon carbide (SiC) used in high power devices, chemical v...
Silicon Carbide has been a semiconductor material of interest as a high power and temperature replac...
By carefully controlling the surface chemistry of the chemical vapor deposition process for silicon ...
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