Add to ORKGAbstract: We investigated the effects of low temperature (500℃) O2 annealing on the characteristics of hafnium silicate (HfSixOy) films deposited on a Si substrate by atomic layer deposition (ALD). We found that the post deposition annealing under oxidizing ambient causes the oxidation of residual Hf metal components, resulting in the improvement of electrical characteristics such as flat band voltage shift (∆Vfb) by hysteresis without oxide capacitance reduction. We suggest that post deposition annealing under oxidizing ambient is necessary to improve the electrical characteristics of HfSixOy films deposite
Hf-silicate films and Hf-silicate/SiO2 bilayers were fabricated on Si(100) to study SiO2 buffer laye...
The changes in the electrical and physical properties of HfO2 films grown using atomic layer deposit...
Abstract Hafnium oxide (HfO2) thin films have attracted much attention owing to their usefulness in ...
Atomic layer chemical vapor deposition (ALCVD) of hafnium silicate films using a precursor combinati...
In this work, hafnium silicate layers on Si and Ge wafers for gate dielectric application in metal-o...
We investigated the effect of post annealing on the electrical and physical properties of atomic-lay...
textAs aggressive scaling of the Metal-Oxide-Semiconductor (MOS) integrated circuit continues, the ...
We report the effect of annealing on electrical and physical characteristics of HfO2, HfSixOy and Hf...
The electrical performance of hafnium silicate (HfSiOx) gate stacks grown by atomic layer deposition...
The effect of deposition temperature and post deposition annealing (PDA) on the electrical propertie...
This study examined the relation between the permittivity and microstructures of atomic layer deposi...
We report here on the thermodynamical stability of ultrathin, hafnium-based dielectric films, namely...
A thin film structure of a HfSixOy/Al2O3/Si gate stack was fabricated on Si(100) by self-limiting at...
[[abstract]]The growth of HfO2 thin films on a HF-dipped p-Si(100) substrate at 200 °C by atomic-lay...
[[abstract]]Varying thicknesses of the HfO2 films prepared by atomic layer deposition (ALD) were com...
Hf-silicate films and Hf-silicate/SiO2 bilayers were fabricated on Si(100) to study SiO2 buffer laye...
The changes in the electrical and physical properties of HfO2 films grown using atomic layer deposit...
Abstract Hafnium oxide (HfO2) thin films have attracted much attention owing to their usefulness in ...
Atomic layer chemical vapor deposition (ALCVD) of hafnium silicate films using a precursor combinati...
In this work, hafnium silicate layers on Si and Ge wafers for gate dielectric application in metal-o...
We investigated the effect of post annealing on the electrical and physical properties of atomic-lay...
textAs aggressive scaling of the Metal-Oxide-Semiconductor (MOS) integrated circuit continues, the ...
We report the effect of annealing on electrical and physical characteristics of HfO2, HfSixOy and Hf...
The electrical performance of hafnium silicate (HfSiOx) gate stacks grown by atomic layer deposition...
The effect of deposition temperature and post deposition annealing (PDA) on the electrical propertie...
This study examined the relation between the permittivity and microstructures of atomic layer deposi...
We report here on the thermodynamical stability of ultrathin, hafnium-based dielectric films, namely...
A thin film structure of a HfSixOy/Al2O3/Si gate stack was fabricated on Si(100) by self-limiting at...
[[abstract]]The growth of HfO2 thin films on a HF-dipped p-Si(100) substrate at 200 °C by atomic-lay...
[[abstract]]Varying thicknesses of the HfO2 films prepared by atomic layer deposition (ALD) were com...
Hf-silicate films and Hf-silicate/SiO2 bilayers were fabricated on Si(100) to study SiO2 buffer laye...
The changes in the electrical and physical properties of HfO2 films grown using atomic layer deposit...
Abstract Hafnium oxide (HfO2) thin films have attracted much attention owing to their usefulness in ...