Research Title: High dielectrics on InGaAs and GaN

The new technology of high-plus metal gate on the high carrier mobility semiconductors hybrid with Si will lead to faster devices and closing the so-called performance gap, where the expected increase in switching speed of the devices no longer keeps up with the scaling trend. This has set unprecedented challenges for material physicists and device engineers. We have successfully continuously kept our world-leading expertise of high-κ dielectric growth on InGaAs and GaN, including high-κ enhancement, surface Fermi level unpinning, the oxide scaling (EOT) to < 1 nm, and the high temperature thermal stability. Our hetero-structures of high-κ’s/InGaAs and GaN are of excellent quality such that low Dit’s have been obtained with meaningful, well-behaved CV, QSCV, conductance, and charge pumping characteristics. Furthermore, we have demonstrated world-record device performance in inversion-channel InGaAs MOSFET, superior to Si in the same gate length, and GaN MOSFET. We have achieved many firsts in the nano-electronics research, critical for the technologies beyond Si CMOS: (1) Have achieved and continued to hold world record high dc and rf device performances, including the drain current, transconductance, and current gain cutoff frequency for the first time in the self