The aluminum-L,,VV Auger spectra for elemental Al. Al oxide and Al nitride have been measured in an assessment of the utility of Auger spectroscopy in characterizing thin oxidized Al films used in model supported-metal catalyst studies. Clearly distinct spectra were found for the three surface chemical states. The oxide spectrum was shown to be similar to published spectra from bulk, single-crystalline AI,O,. Complete oxidation of Al films required exposure to 0, at temperatures above room temperature. Room temperature exposure to hydrazine resulted in the complete nitriding of Al films. The spectrum for the nitride is similar in shape to published spectra from films produced by two alternative methods of nitriding. The hydrazine-exposure m...
Aluminum nitride (AlN) thin films were grown in a N2 atmosphere onto a Si/Si3N4 substrate by pulsed ...
Experiments were carried out to investigate the feasibility of metalorganic surface chemical adsorpt...
where the asterisks designate the surface species. Growth of stoichiometric Al2O3 thin films with ca...
Depth profiles measurements of the elements Al, Si, N and 0 were determined using Auger electron spe...
Depth profiles measurements of the elements A1, Si, N and O were determined using Auger electron spe...
The surface chemical activity of an alumina films grown on Mo(100) by oxidation of aluminum evaporat...
The bonding and electronic structure of surface is most often studied by XPS, where the energy shift...
Results of resonant Auger spectroscopy experiments are presented for Cu, Co, and oxidized Al. Sub-li...
In the present work, the surface properties of various Al oxide films were investigated. The oxide f...
Aluminum oxide and aluminum nitride-containing films were grown by atomic layer deposition (ALD) and...
Modern analytical techniques are useful to characterize oxide films and to study oxide growth proces...
In this work we used atomic layer deposition (ALD) method to obtain thin films of AlN using tris(die...
The chemical environment of N in nitrided aluminum oxide films on Si~001! was investigated by angle-...
Aluminium oxide thin films were prepared by the ALE process using AICI3 and A1(OR)3 (R = Et,Pr) as a...
Thin films of AlOxNy were deposited by magnetron sputtering in a wide composition range. Different s...
Aluminum nitride (AlN) thin films were grown in a N2 atmosphere onto a Si/Si3N4 substrate by pulsed ...
Experiments were carried out to investigate the feasibility of metalorganic surface chemical adsorpt...
where the asterisks designate the surface species. Growth of stoichiometric Al2O3 thin films with ca...
Depth profiles measurements of the elements Al, Si, N and 0 were determined using Auger electron spe...
Depth profiles measurements of the elements A1, Si, N and O were determined using Auger electron spe...
The surface chemical activity of an alumina films grown on Mo(100) by oxidation of aluminum evaporat...
The bonding and electronic structure of surface is most often studied by XPS, where the energy shift...
Results of resonant Auger spectroscopy experiments are presented for Cu, Co, and oxidized Al. Sub-li...
In the present work, the surface properties of various Al oxide films were investigated. The oxide f...
Aluminum oxide and aluminum nitride-containing films were grown by atomic layer deposition (ALD) and...
Modern analytical techniques are useful to characterize oxide films and to study oxide growth proces...
In this work we used atomic layer deposition (ALD) method to obtain thin films of AlN using tris(die...
The chemical environment of N in nitrided aluminum oxide films on Si~001! was investigated by angle-...
Aluminium oxide thin films were prepared by the ALE process using AICI3 and A1(OR)3 (R = Et,Pr) as a...
Thin films of AlOxNy were deposited by magnetron sputtering in a wide composition range. Different s...
Aluminum nitride (AlN) thin films were grown in a N2 atmosphere onto a Si/Si3N4 substrate by pulsed ...
Experiments were carried out to investigate the feasibility of metalorganic surface chemical adsorpt...
where the asterisks designate the surface species. Growth of stoichiometric Al2O3 thin films with ca...