Role of Hydrogen in Dielectrics for Electronics and Optoelectronics Devices

Silicon dioxide and silicon nitrides are the extensively utilized dielectrics in electronic and oproelectronic devices for various applications. Hydrogen has been used during processing and deposition of SiO2 and Si3N4 to passivate Si dangling bonds at the interface and in the bulk of the dielectric (1, 2). The dangling bonds at the interface of the Si nanocrystals that are embedded in SiO2 are also passivated with hydrogen (3). Role hydrogen, therefore, continues to be significant for silicon electronic devices in nanometer range even with the introduction of high dielectric constant materials as gate dielectrics. The historical perspective of role of hydrogen in passivation of dangling bonds will be discussed in addition to the current trends