Ion-Implantation and Activation of Aluminum in 6H-SiC

Ion implantation of large doses (>10Wcm 2) of AI into SiC is known to produce excessive damage which cannot be readily eliminated by thermal annealing. We have demonstrated electrical activation of i n-implanted AI in 6H-SiC, using a relatively low total ion dose (2.9 • 10Wcm 2) implanted at three energies (65, 135, and 220 keV) into a 2 t~m epitaxial ayer with a background p-type doping level of 1 x 101S/cm 3. The implanted samples were annealed at temperatures from 1300 to 1500 ~ using a proximity annealing method to retard the decomposition of the SiC surface at high temperatures. Upon annealing at 1450 ~ the sheet resistance of the implanted layer was reduced by approximately a factor of four relative to the same p-type layer which was not implanted