Add to ORKGOne of the potential advantages of rapid thermal annealing (RTA) compared to conventional furnace annealing is re-duced implant dopant and background impurity diffusion. In this paper, the migration of Cr and Mn during annealing o
Rapid thermal processing of implanted GaAs reveals a definitive sequence in the damage annealing and...
We have studied the effect of rapid thermal annealing (RTA) on GaInNAs/GaAs quantum wells (QWs) grow...
AbstractComputer simulation and analysis of our data compared to published results on the activation...
Pitt ing at the periphery of refractory gates was observed fol lowing rapid thermal annealing (RTA) ...
Redistribution ofthe p-type dopants Zn, Mg, and Cd ion implanted in GaAs was examined for two caples...
170-174Single crystal GaAs substrates implanted with 70 MeV 120Sn have been investigated by X-ray di...
3. By ion implantation, the reflectivity of the wafer in the infrared region increases, but it decre...
The outdiffusion of Be implanted into GaAs has been found to be identical after capless or capped (S...
temperature and duration of the RTA, whereas the mi-gration is relatively absent for similar capless...
The electrical activation of Mg and carrier profile distribution after rapid thermal annealing (RTA)...
A new method of rapid thermal annealing (RTA) in arsenic overpressure using a high thermal mass rea...
This paper describes the regrowth and activation characteristics of Si-implanted GaAs resulting from...
Rapid Thermal Annealing has been used to study the electrical activation of a range of donor and acc...
The electrical activation of Mg and carrier profile distribution after rapid thermal annealing (RTA)...
Post-implant annealing of InP and GaInAs is usually accomplished using thermal cycles of 10-30 minut...
Rapid thermal processing of implanted GaAs reveals a definitive sequence in the damage annealing and...
We have studied the effect of rapid thermal annealing (RTA) on GaInNAs/GaAs quantum wells (QWs) grow...
AbstractComputer simulation and analysis of our data compared to published results on the activation...
Pitt ing at the periphery of refractory gates was observed fol lowing rapid thermal annealing (RTA) ...
Redistribution ofthe p-type dopants Zn, Mg, and Cd ion implanted in GaAs was examined for two caples...
170-174Single crystal GaAs substrates implanted with 70 MeV 120Sn have been investigated by X-ray di...
3. By ion implantation, the reflectivity of the wafer in the infrared region increases, but it decre...
The outdiffusion of Be implanted into GaAs has been found to be identical after capless or capped (S...
temperature and duration of the RTA, whereas the mi-gration is relatively absent for similar capless...
The electrical activation of Mg and carrier profile distribution after rapid thermal annealing (RTA)...
A new method of rapid thermal annealing (RTA) in arsenic overpressure using a high thermal mass rea...
This paper describes the regrowth and activation characteristics of Si-implanted GaAs resulting from...
Rapid Thermal Annealing has been used to study the electrical activation of a range of donor and acc...
The electrical activation of Mg and carrier profile distribution after rapid thermal annealing (RTA)...
Post-implant annealing of InP and GaInAs is usually accomplished using thermal cycles of 10-30 minut...
Rapid thermal processing of implanted GaAs reveals a definitive sequence in the damage annealing and...
We have studied the effect of rapid thermal annealing (RTA) on GaInNAs/GaAs quantum wells (QWs) grow...
AbstractComputer simulation and analysis of our data compared to published results on the activation...