Effect of Intrinsic Gettering on Semiconductor Device Performance in SOI Substrates

This work investigates the effect of varying the structural characteristics of fusion-bonded thick SOI on the quality of oxides grown during fabrication of transistors using normal CMOS processing methods. The influences of the SOI device material, handle material and bonding procedure were examined using material supplied by various SOI vendors. In addition, the incorporation of gettering sites into the SOI layer near the interface with the buried oxide, was studied using buried implanted layers of various species. We found a strong influence of both the vendor and the position of the bonding interface on the quality of the surface thermal oxides, with handle-oxidised material giving superior gate oxides to device-oxidised SOI. A large improvement in oxide quality was shown by the introduction of the implanted ions, which was strongly dependent on the species, germanium giving the largest effect. This enabled the growth of high quality gate and tunnel oxides for electronic device fabrication