Temperature and Time Dependence of Dopant Enhanced Diffusion in Self-Ion Implanted Silicon

Diffusion exper iments for boron, phosphorus, arsenic, and ant imony were performed in the presence of lattice defects produced by sil icon ion implantation. The effects of transient enhanced iffusion were revealed by bevel ing and staining measurements on select ively implanted samples and by S IMS determinat ions of dopant profiles. The anneal ing of the doped implanted specimens ranged from 700 ~ to 1100 ~ the last t reatment having been made by electron beam. The low temperatures al lowed the fol lowing of the kinetics of the anomalous diffusion: it was ascertained that the enhanced iffu-sion coefficient is nearly constant until a t ime value is reached which decreases with the temperature increase, after which it tends gradually to the equi l ibr ium value. This trend resulted in agreement with that shown by the lattice damage volu-tion, as revealed by double crystal x-ray analysis of the rocking curves of the implanted samples. The SIMS profiles indica-ted that only a fraction of the dopant which is located at the residual implantat ion damage is responsible for the anoma-lous diffusion. Recent works showed that the evolut ion with tempera-ture of the point defects induced by ion implantat ion led to a marked t rans ient enhanced d i f fus ion for the ele-ments l ike phosphorus (1-4) and boron (3-9), whi le mino