Add to ORKGThe effects of low-temperature (210 C–290 C) annealing on the microstructure, lattice constant, and magnetic properties o
We investigate effects of annealing on magnetic properties of a thick (Ga,Mn)As layer, and End a dra...
Mn+ ions were implanted into n-type Ge(1 1 1) single crystal at room temperature at an energy of 100...
This article describes a combined theoretical and experimental study of the ferromagnetic semiconduc...
[[abstract]]The effects of low-temperature (210°C-290°C) annealing on the microstructure, lattice co...
[[abstract]]The effects of low-temperature (210 degrees C-290 degrees C) annealing on the microstruc...
A systematic photoemission and variable temperature resistivity measurements are carried out on Ga0....
Although conventional semiconductors form the basis for electronic and photonic devices, it would be...
We report experiments on the magnetism and the transport in III-V based diluted mag-netic semiconduc...
In this paper we report the effect of low temperature annealing on the high field magneto-transport ...
The diluted ferromagnetic semiconductor (GaMn)As has been grown by low temperature molecular beam ep...
One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibilit...
The diluted ferromagnetic semiconductor (GaMn)As has been grown by low temperature molecular beam ep...
[[abstract]]A series of quaternary-diluted magnetic semiconductors, (In1-yA;y)1-xMnxAs, have been su...
We report the magnetic and electrical properties in Mn-doped and undoped (Zn,Sn)As2 epilayers, that ...
A dilute magnetic semiconductor was achieved by implanting Mn ions into p-type GaN and subsequent an...
We investigate effects of annealing on magnetic properties of a thick (Ga,Mn)As layer, and End a dra...
Mn+ ions were implanted into n-type Ge(1 1 1) single crystal at room temperature at an energy of 100...
This article describes a combined theoretical and experimental study of the ferromagnetic semiconduc...
[[abstract]]The effects of low-temperature (210°C-290°C) annealing on the microstructure, lattice co...
[[abstract]]The effects of low-temperature (210 degrees C-290 degrees C) annealing on the microstruc...
A systematic photoemission and variable temperature resistivity measurements are carried out on Ga0....
Although conventional semiconductors form the basis for electronic and photonic devices, it would be...
We report experiments on the magnetism and the transport in III-V based diluted mag-netic semiconduc...
In this paper we report the effect of low temperature annealing on the high field magneto-transport ...
The diluted ferromagnetic semiconductor (GaMn)As has been grown by low temperature molecular beam ep...
One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibilit...
The diluted ferromagnetic semiconductor (GaMn)As has been grown by low temperature molecular beam ep...
[[abstract]]A series of quaternary-diluted magnetic semiconductors, (In1-yA;y)1-xMnxAs, have been su...
We report the magnetic and electrical properties in Mn-doped and undoped (Zn,Sn)As2 epilayers, that ...
A dilute magnetic semiconductor was achieved by implanting Mn ions into p-type GaN and subsequent an...
We investigate effects of annealing on magnetic properties of a thick (Ga,Mn)As layer, and End a dra...
Mn+ ions were implanted into n-type Ge(1 1 1) single crystal at room temperature at an energy of 100...
This article describes a combined theoretical and experimental study of the ferromagnetic semiconduc...