Add to ORKGDue to the inherent limitation from overlay shift control, the punch-through scheme coupled with via CD shrink and the definition optimization of metal hard-mask open was proven to be the current-best choice and only feasible way for the enhancement of TDDB performance and gap-fill window of metal hard-mask based ultra low-k dielectric interconnects. The disadvantages of metal hard-mask based all- in-one etch include the potential defect from TixFy and the early copper exposure before liner removal step. The copper exposure time during all- in-one etch needs well controlled to avoid the via/trench bottom roughness and the inter-layer VBD. Stress migration (SM) also attracts special attention in metal hard-mask based process and its performa...
From 45 nm technological node, metallic interconnect lines of microelectronic circuits are isolated ...
From 45 nm technological node, metallic interconnect lines of microelectronic circuits are isolated ...
International audienceFor the next technological generations of integrated circuits, the traditional...
With shrinking geometries and adoption of lower k dielectrics and thinner barriers to minimize devic...
International audienceThe choice of copper/low-k interconnect architectures is instrumental in achie...
International audienceThe choice of copper/low-k interconnect architectures is instrumental in achie...
Downlooften silicon nitride or silicon oxide, has a higher dielectric constant (high-k, 4.0 < k &...
Cu and low-k dielectric based back-end-of-the-line (BEOL) interconnects is indispensable in advanced...
A novel wet cleaning non-fluoride formulation approach was developed with a TiN etch rate of more th...
Double patterning lithography appears a likely candidate to bridge the gap between water-based immer...
Double patterning lithography appears a likely candidate to bridge the gap between water-based immer...
Double patterning lithography appears a likely candidate to bridge the gap between water-based immer...
Double patterning lithography appears a likely candidate to bridge the gap between water-based immer...
From 45 nm technological node, metallic interconnect lines of microelectronic circuits are isolated ...
From 45 nm technological node, metallic interconnect lines of microelectronic circuits are isolated ...
From 45 nm technological node, metallic interconnect lines of microelectronic circuits are isolated ...
From 45 nm technological node, metallic interconnect lines of microelectronic circuits are isolated ...
International audienceFor the next technological generations of integrated circuits, the traditional...
With shrinking geometries and adoption of lower k dielectrics and thinner barriers to minimize devic...
International audienceThe choice of copper/low-k interconnect architectures is instrumental in achie...
International audienceThe choice of copper/low-k interconnect architectures is instrumental in achie...
Downlooften silicon nitride or silicon oxide, has a higher dielectric constant (high-k, 4.0 < k &...
Cu and low-k dielectric based back-end-of-the-line (BEOL) interconnects is indispensable in advanced...
A novel wet cleaning non-fluoride formulation approach was developed with a TiN etch rate of more th...
Double patterning lithography appears a likely candidate to bridge the gap between water-based immer...
Double patterning lithography appears a likely candidate to bridge the gap between water-based immer...
Double patterning lithography appears a likely candidate to bridge the gap between water-based immer...
Double patterning lithography appears a likely candidate to bridge the gap between water-based immer...
From 45 nm technological node, metallic interconnect lines of microelectronic circuits are isolated ...
From 45 nm technological node, metallic interconnect lines of microelectronic circuits are isolated ...
From 45 nm technological node, metallic interconnect lines of microelectronic circuits are isolated ...
From 45 nm technological node, metallic interconnect lines of microelectronic circuits are isolated ...
International audienceFor the next technological generations of integrated circuits, the traditional...