InN Piezoelectric Resonator

Indium nitride (InN) is a prominent material with superior electron transport properties and piezoelectricity which exhibits c-axis oriented polarization in wurtzite crystal structure [1,2]. Compared to other group-III nitrides (GaN, AlN), InN has the lowest effective mass, the highest mobility, and the highest saturation velocity. InN is better used for high-frequency and high-speed electronic devices. InN film was grown on silicon substrates by plasma assisted molecular-beam epitaxy (PA-MBE). Prior to the InN growth, a Si3N4 buffer layer was grown first on Si in order to prevent the inter diffusion. Due to the possible lattice matching between hexagonal wurtzite epitaxial films and a diamond Si (111) crystal face, the integration of InN on Si (111) opens a new path toward advance