Nanocrystalline Si formation inside SiNx nanostructures usingionized N2 gas bombardment

Nanostructures of SiNx were made by bombardment of ionized N2 on Si surfaceand subsequent annealing. Atomic force micrograph showed the density of SiNx nanostructures was 3×1010/cm2. Their lateral size and height were 40~60 nm and 15 nm, respectively. The chemical state of the nanostructure was measured using X-ray photoelectron spectroscopy, which changed from SiNx to Si3N4 + SiNx as the bombarding ionized gas current increases. Upon annealing, transmission electron micrograph showed a clear evidence for crystalline Si phase formation inside the SiNx nanostructures. Photoluminescence peak observed at around 400 nm was thought to be originated from the interface states between the nanocrystalline Si and surrounding SiNx nanostructures KEYWORDS：Si nanostructures, ion beam bombardment, XPS, SiNx, photoluminescence Recently, Si-based luminescent nanostructures such as nanocrystalline Si (nc-Si) have been investigated intensively for optoelectronic device applications [1-4]. In particular, many researchers have reporte