Crystallization of amorphous anodic oxide films on tantalum may be accomplished by holding at temperatures in the neighborhood of room temperature provided a strong electric field is present in the film. This results in crystalline areas consisting of pie-shaped polycrystalline segments urrounded by coiled-up cylinders of the replaced amorphous phase. Factors affecting the nucleation and growth of these areas are dis-cussed, and a mechanism of growth is proposed. The nucleation of the areas is not understood at present
Tantalum has been the preferred capacitor technology for use in long lifetime electronic devices tha...
Solid-solution Nb–O films containing up to 50 atom % oxygen, prepared by magnetron sputtering, were ...
The high-temperature oxidation characteristics of tantalum specimens anodized in phosphoric acid sol...
The growth behavior of amorphous anodic films on Ta\u2013Nb solid solution alloys has been investiga...
The growth of crystalline anodie aluminum oxide during anodization i an aqueous ammonium citrate ele...
The anodic oxidation of tantalum in the gas phase was studied using an electromagnetic, ion cathode....
Ultraviolet irradiation during the growth of amorphous Ta.~O ~ films in aque-ous solutions results i...
The anodic oxidation of niobium has been studied in a variety of electrolytes at temperatures of 20&...
The total voltage applied across an anodic film during its formation consists of the voltage applied...
In this work the authors investigated the influence of the crystallographic grain orientation on the...
The technique of ellipsometry was applied to the study of nonuniform anodic oxide films resulting fr...
The present study focuses mainly on non-electrochem. investigation of thin barrier-like oxide films ...
The growth of anodic oxides in fluoride solutions and the subsequent str ip-ping away of this oxide ...
In the growth of anodic oxide films on tantalum, the ionic conduction at a given current density de...
The present work demonstrates effective inhibition of field crystallization of amorphous anodic niob...
Tantalum has been the preferred capacitor technology for use in long lifetime electronic devices tha...
Solid-solution Nb–O films containing up to 50 atom % oxygen, prepared by magnetron sputtering, were ...
The high-temperature oxidation characteristics of tantalum specimens anodized in phosphoric acid sol...
The growth behavior of amorphous anodic films on Ta\u2013Nb solid solution alloys has been investiga...
The growth of crystalline anodie aluminum oxide during anodization i an aqueous ammonium citrate ele...
The anodic oxidation of tantalum in the gas phase was studied using an electromagnetic, ion cathode....
Ultraviolet irradiation during the growth of amorphous Ta.~O ~ films in aque-ous solutions results i...
The anodic oxidation of niobium has been studied in a variety of electrolytes at temperatures of 20&...
The total voltage applied across an anodic film during its formation consists of the voltage applied...
In this work the authors investigated the influence of the crystallographic grain orientation on the...
The technique of ellipsometry was applied to the study of nonuniform anodic oxide films resulting fr...
The present study focuses mainly on non-electrochem. investigation of thin barrier-like oxide films ...
The growth of anodic oxides in fluoride solutions and the subsequent str ip-ping away of this oxide ...
In the growth of anodic oxide films on tantalum, the ionic conduction at a given current density de...
The present work demonstrates effective inhibition of field crystallization of amorphous anodic niob...
Tantalum has been the preferred capacitor technology for use in long lifetime electronic devices tha...
Solid-solution Nb–O films containing up to 50 atom % oxygen, prepared by magnetron sputtering, were ...
The high-temperature oxidation characteristics of tantalum specimens anodized in phosphoric acid sol...