Duality in Resistance Switching Behavior of TiO2-Cu2ZnSnS4 Device

The resistive switching behavior of TiO2 based electronic devices have been extensively investigated the last two decades due to their low cost and potential applications in high speed electronic devices. However, the randomness in switching behavior and uncertainty in conducting filament formation often restricts their usage for long-term applications. A duality in current transport mechanism was observed when nano-architectural parameters of the TiO2 memory resistance device were altered. TiO2 nanotube-CZTS nanocrystals based devices exhibit Fowler-Nordheim quantum tunneling, whereas TiO2 nanocrystals-CZTS thin film based devices exhibit space charge limited conduction. Temperature dependent electrical studies indicate that polaronic transport is one of the phenomena assisting in electrical conduction. Electronic band information suggests that tunneling between CZTS and TiO2 is indirect. A unique interface state between two adjacent materials seems to be responsible for the negative differential resistance (NDR) behavior of TiO2-CZTS diodes. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY