Add to ORKGPlasma-enhanced chemical vapor deposited (PECVD) silicon dioxide films show considerable improvement in film quality following annealing at temperatures significantly below their densification temperature. This study was per-formed to investigate this improvement phenomenon. PECVD silicon dioxide films were annealed in different ambients. Some of the films were aged for various lengths of time and then annealed in a nitrogen ambient at atmospheric pressure. The change in bonding nature of these films during annealing and aging was studied by Fourier transform infrared spec
The properties of SiO2 film and the Si/SiO2 interface formed by remote plasma enhanced chemical vapo...
[[abstract]]Thermal stability of fluorine-doped silicon dioxide films deposited by high-density plas...
The anhydrous HF vapor etching of sacrificial silicon dioxide films grown by plasma-enhanced and low...
An annealing study was performed on nonstoichiometric amorphous SiO = (x < 2) films fabricated by...
In this work, we compared structural and electrical properties of SiO2 films obtained using three di...
The bonding of plasma enhanced chemical vapor deposition (PECVD) silicon dioxide layers, deposited a...
A single chamber system for plasma-enhanced chemical vapor deposition was employed to deposit differ...
High structural quality silicon dioxide films have been prepared by the remote plasma-enhanced chemi...
In this paper we report on the use of expanding thermal plasma technique for the deposition of carbo...
The effects of postannealing treatment in ambient forming gas (10% H(2):90%N(2)) on low-k SiOC(H) fi...
The effect of power on the electrical and interface properties of silicon dioxide films produced by ...
The purpose of this study was to examine how certain parameters like temperature, pressure, and gas ...
Deposition mechanism of SiO2 film growth from SiH4-N2O by remote plasma enhanced chemical vapor depo...
This work addresses the optical properties and chemical composition of carbon-containing silicon dio...
conventional plasma enhanced chemical vapor deposition (PECVD) at low temperature/pressure with sila...
The properties of SiO2 film and the Si/SiO2 interface formed by remote plasma enhanced chemical vapo...
[[abstract]]Thermal stability of fluorine-doped silicon dioxide films deposited by high-density plas...
The anhydrous HF vapor etching of sacrificial silicon dioxide films grown by plasma-enhanced and low...
An annealing study was performed on nonstoichiometric amorphous SiO = (x < 2) films fabricated by...
In this work, we compared structural and electrical properties of SiO2 films obtained using three di...
The bonding of plasma enhanced chemical vapor deposition (PECVD) silicon dioxide layers, deposited a...
A single chamber system for plasma-enhanced chemical vapor deposition was employed to deposit differ...
High structural quality silicon dioxide films have been prepared by the remote plasma-enhanced chemi...
In this paper we report on the use of expanding thermal plasma technique for the deposition of carbo...
The effects of postannealing treatment in ambient forming gas (10% H(2):90%N(2)) on low-k SiOC(H) fi...
The effect of power on the electrical and interface properties of silicon dioxide films produced by ...
The purpose of this study was to examine how certain parameters like temperature, pressure, and gas ...
Deposition mechanism of SiO2 film growth from SiH4-N2O by remote plasma enhanced chemical vapor depo...
This work addresses the optical properties and chemical composition of carbon-containing silicon dio...
conventional plasma enhanced chemical vapor deposition (PECVD) at low temperature/pressure with sila...
The properties of SiO2 film and the Si/SiO2 interface formed by remote plasma enhanced chemical vapo...
[[abstract]]Thermal stability of fluorine-doped silicon dioxide films deposited by high-density plas...
The anhydrous HF vapor etching of sacrificial silicon dioxide films grown by plasma-enhanced and low...