In order to realize the high performance of RC delay, direct polished porous type ultra low-K film (ULK) is integrated into Cu dual-damascene interconnects for 45 nm and beyond. In the past, metal line seems not an important role in the world of TDDB. However, because of the minimized feature size and the relative fragile ULK film properties, it was found that the Cu roughness of polished surface also plays an important role to effect on the reliability such as TDDB from this generation, [1, 2]. Post-cleaning of Cu CMP is a major process to manage the Cu surface roughness. In this paper, the correlation for post-cleaning time to the TDDB was discussed. The mechanism with two models was built up to explain this behavior as well
Traditionally, conventional test structures and standard voltage biasing is used for the accelerated...
The behaviors of various electroplated copper films during CMP are important for removal mechanism a...
Copper layer metallization is one of the important processes in integrated circuit manufacturing. On...
[[abstract]]The effect of copper (Cu) barrier film deposition process on the Cu interconnects was in...
Advanced interconnect technologies require the continuous development of reliable low-k dielectric m...
Cu has been widely accepted as an interconnection material in deep sub-micron multi-level device app...
textAs IC devices continue to shrink, the interconnect delay dominates over the gate delay in the c...
Cu and low-k dielectric based back-end-of-the-line (BEOL) interconnects is indispensable in advanced...
The time-dependent dielectric breakdown (TDDB) mechanism in Cu/ultra-low-k (ULK) on-chip interconnec...
Ultra-low-k time-dependent dielectric breakdown (TDDB) is one of the most important reliability iss...
Dielectric stacks containing porous low-k materials were investigated regarding their ability to pas...
Recently, a number of studies on Cu CMP have achieved multilevel interconnections with a lower elect...
With the application of Ultra low-k dielectric material in the advanced nodes, more and more challen...
Single damascene copper interconnect structures were fabricated. Cu/ultra-low-k (porous SiLKTM) int...
Introduction- As feature sizes of integrated circuits (ICs) continuously shrink to sub-micro, interc...
Traditionally, conventional test structures and standard voltage biasing is used for the accelerated...
The behaviors of various electroplated copper films during CMP are important for removal mechanism a...
Copper layer metallization is one of the important processes in integrated circuit manufacturing. On...
[[abstract]]The effect of copper (Cu) barrier film deposition process on the Cu interconnects was in...
Advanced interconnect technologies require the continuous development of reliable low-k dielectric m...
Cu has been widely accepted as an interconnection material in deep sub-micron multi-level device app...
textAs IC devices continue to shrink, the interconnect delay dominates over the gate delay in the c...
Cu and low-k dielectric based back-end-of-the-line (BEOL) interconnects is indispensable in advanced...
The time-dependent dielectric breakdown (TDDB) mechanism in Cu/ultra-low-k (ULK) on-chip interconnec...
Ultra-low-k time-dependent dielectric breakdown (TDDB) is one of the most important reliability iss...
Dielectric stacks containing porous low-k materials were investigated regarding their ability to pas...
Recently, a number of studies on Cu CMP have achieved multilevel interconnections with a lower elect...
With the application of Ultra low-k dielectric material in the advanced nodes, more and more challen...
Single damascene copper interconnect structures were fabricated. Cu/ultra-low-k (porous SiLKTM) int...
Introduction- As feature sizes of integrated circuits (ICs) continuously shrink to sub-micro, interc...
Traditionally, conventional test structures and standard voltage biasing is used for the accelerated...
The behaviors of various electroplated copper films during CMP are important for removal mechanism a...
Copper layer metallization is one of the important processes in integrated circuit manufacturing. On...