AISixNy as an Embedded Layer for Attenuated Phase-Shifting Mask in 193 nm and the Utilization of a Chemically Amplified Negative Resist NEB-22 for Maskmaking

AlSixNy (x-0.31, y-0.45) thin film as a new embedded material for AttPSM in 193 nm lithography was presented. With the good controlling of plasma sputtering of Al (100~130 W) and Si (20~50 W) under Ar (75 sccm), and nitrogen (2.5~5 sccm), A1SixNy has enough deposition latitude to meet the requirements a an embedded layer. For required phase shift 180 degree, the calculated thickness d~8 oof A1SixNy films is in the range of 87-100 nm. The T % in 365 and 488 nm for optical inspection and alignment is below 40%. Its sheet resistance R,, is less than 0.8 kf2/square. Helicon wave plasma etcher and Taguchi design of experiment have been applied to the study of the etching selectivity of AlSixNy over substrate fused silica and negative resis