Abstract—In this work, we report extraction of the density-of-states (DOS) in polymer-based organic thin film transistors through the multi-frequency C-V spectroscopy. Extracted DOS is implemented into a TCAD simulator and obtained a consistent output curves with non-linear characteristics considering the contact resistance effect. We employed a Schottky contact model for the source and drain to fully reproduce a strong nonlinearity with proper physical mechanisms in the output characteristics even under a very small drain biases. For experimental verification of the model and extracted DOS, 2 different OTFTs (P3HT and PQT-12) are employed. By controlling the Schottky contact model parameters in the TCAD simulator, we accurately reproduced ...
N-type organic thin film transistor (OTFT) with a top-contact structure was fabricated by thermal va...
A physically based analytical model of the drain current of an organic thin-film transistor is propo...
Field effect transistors require an Ohmic source contact and an Ohmic drain contact for ideal operat...
Motivation: Electronics based on organic thin-film transistors (OTFTs) enables a variety of attracti...
We report on an empirically based physical model developed for small-molecule organic thin film tran...
We present a modular numerical model for organic thin-film field-effect transistors (OTFTs) that all...
Organic thin-film transistors (OTFTs) are an emerg- ing technology for large scale circuit integrati...
Organic thin-film transistors (OTFTs) are an emerging technology for large scale circuit integration...
The Density of States (DOS) is an ingredient of critical importance for the accurate physical unders...
The presence of gate leakage through polymer dielectric in organic thin film transistors (OTFT) prev...
physically based analytical model of the drain current of an organic thin-film transistor is propose...
A physically based analytical model of the drain current of an organic thin-film transistor is propo...
A unified drain current model of complementary (p- and n-type) organic thin film transistors (OTFTs)...
Organic Devices offer low-cost manufacturing and better flexibility, sustainability and solution-pro...
N-type organic thin film transistor (OTFT) with a top-contact structure was fabricated by thermal va...
A physically based analytical model of the drain current of an organic thin-film transistor is propo...
Field effect transistors require an Ohmic source contact and an Ohmic drain contact for ideal operat...
Motivation: Electronics based on organic thin-film transistors (OTFTs) enables a variety of attracti...
We report on an empirically based physical model developed for small-molecule organic thin film tran...
We present a modular numerical model for organic thin-film field-effect transistors (OTFTs) that all...
Organic thin-film transistors (OTFTs) are an emerg- ing technology for large scale circuit integrati...
Organic thin-film transistors (OTFTs) are an emerging technology for large scale circuit integration...
The Density of States (DOS) is an ingredient of critical importance for the accurate physical unders...
The presence of gate leakage through polymer dielectric in organic thin film transistors (OTFT) prev...
physically based analytical model of the drain current of an organic thin-film transistor is propose...
A physically based analytical model of the drain current of an organic thin-film transistor is propo...
A unified drain current model of complementary (p- and n-type) organic thin film transistors (OTFTs)...
Organic Devices offer low-cost manufacturing and better flexibility, sustainability and solution-pro...
N-type organic thin film transistor (OTFT) with a top-contact structure was fabricated by thermal va...
A physically based analytical model of the drain current of an organic thin-film transistor is propo...
Field effect transistors require an Ohmic source contact and an Ohmic drain contact for ideal operat...