Add to ORKGAbstract-A buried crescent InGaAsP-InP laser with two active lay-ers was fabricated to study the temperature behavior of the double-carrier-confinement structure. An anomalously high-characteristic temperature To was measured and an optical switching behavior was observed. A model analysis and numerical calculation using a rate equation approach explained qualitatively very well the experimental results. It was revealed that not only the Auger recombination in this special double-active-layer configuration, but that the temperature de-pendent leakage current, which leads to uniform carrier distribution in both active regions, is essential to increase To
the magnitude of the change in threshold current with temperature in InP quantum dot lasers caused b...
High-power, broad-area, semiconductor lasers are attractive sources for material processing, aerospa...
A novel idea of InAlAs native oxide utilized to replace the p-n-p-n thyristor blocking layer and imp...
A buried crescent InGaAsP-InP laser with two active layers was fabricated to study the temperature b...
A buried crescent InGaAsP/InP laser with a double active layer was fabricated. The laser showed very...
A direct measurement of electron and hole leakage in InGaAsP/InP lasers has been carried out. The ef...
Low temperature behaviour of InGaAsP laser diode is studied. The laser is a Fabry-Pérot type with a ...
Time-dependent thermal simulation of ridge-geometry InGaN laser diodes is carried out with a two-dim...
We have studied exper imentally the performance of a semiconductor laser diode that has an asymmetr ...
The authors have grown self-assembled InP quantum dot lasers on GaAs substrate by MOVPE with 750°C g...
This thesis describes the design, optimization, realization and characterization of a wavelength tun...
The subjects of this thesis can be divided into two main categories: III-V semiconductor lasers and ...
A new type of band-edge aligned carrier barriers is introduced into InGaAs-AlGaAs single quantum-wel...
The improved thermal stability of 1.5 mu m InGaAlAs- compared with InGaAs-based lasers is investigat...
Abstract—We analyze the high-temperature continuous-wave performance of 1.3- m AlGaInAs/InP laser di...
the magnitude of the change in threshold current with temperature in InP quantum dot lasers caused b...
High-power, broad-area, semiconductor lasers are attractive sources for material processing, aerospa...
A novel idea of InAlAs native oxide utilized to replace the p-n-p-n thyristor blocking layer and imp...
A buried crescent InGaAsP-InP laser with two active layers was fabricated to study the temperature b...
A buried crescent InGaAsP/InP laser with a double active layer was fabricated. The laser showed very...
A direct measurement of electron and hole leakage in InGaAsP/InP lasers has been carried out. The ef...
Low temperature behaviour of InGaAsP laser diode is studied. The laser is a Fabry-Pérot type with a ...
Time-dependent thermal simulation of ridge-geometry InGaN laser diodes is carried out with a two-dim...
We have studied exper imentally the performance of a semiconductor laser diode that has an asymmetr ...
The authors have grown self-assembled InP quantum dot lasers on GaAs substrate by MOVPE with 750°C g...
This thesis describes the design, optimization, realization and characterization of a wavelength tun...
The subjects of this thesis can be divided into two main categories: III-V semiconductor lasers and ...
A new type of band-edge aligned carrier barriers is introduced into InGaAs-AlGaAs single quantum-wel...
The improved thermal stability of 1.5 mu m InGaAlAs- compared with InGaAs-based lasers is investigat...
Abstract—We analyze the high-temperature continuous-wave performance of 1.3- m AlGaInAs/InP laser di...
the magnitude of the change in threshold current with temperature in InP quantum dot lasers caused b...
High-power, broad-area, semiconductor lasers are attractive sources for material processing, aerospa...
A novel idea of InAlAs native oxide utilized to replace the p-n-p-n thyristor blocking layer and imp...