Copyright © 2013 Guojian Wang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Two optical methods, namely crystal facet reflection and etching pits reflection, were used to orient <100> and <111> high-purity germanium crystals. The X-ray diffraction patterns of three slices that were cut from the oriented <100> and <111> crystals were measured by X-ray diffraction. The experimental errors of crystal facet reflection method and etching pits reflection method are in the range of 0.05 ˚- 0.12˚. The crystal facet reflection method and etching pits re...
Aiming at the fabrication of germanium strips with lateral faces provided of excellent crystal quali...
An experimental study on the method of indentations for bent crystals to realize a hard X-ray Laue l...
The efficiency of a Laue lens for X and Gamma ray focusing in the energy range 60 ÷ 600 keV is close...
An instrument based on the l ight figure technique for optical orientation of Ge and Si is described...
Light figures projected on a plate screen from germanium single crystals, polished mechanically and ...
Characterizing crystallographic orientation is essential for assessing structure-property relationsh...
The light-figure method is compared with the back-reflection Laue method for determining crystal ori...
A germanium crystal was bent through a grid of superficial grooves, manufactured on the sample surfa...
In the crystal growth lab of South Dakota University, we are growing high purity germanium (HPGe) cr...
We present the numerical optimization and the technological development progress of x-ray optics bas...
A procedure of the back-reflection Laue method for determining crystal orientations is described. In...
A procedure of the perfect, accurate, and rapid orientation determination by the light-figure method...
The grooving technique was employed for manufacturing a self-standing curved Ge crystal. The crystal...
Aiming at the fabrication of germanium strips with lateral faces provided of excellent crystal quali...
The article presents an assessment of the crystal perfection of single-crystal turbine blades based ...
Aiming at the fabrication of germanium strips with lateral faces provided of excellent crystal quali...
An experimental study on the method of indentations for bent crystals to realize a hard X-ray Laue l...
The efficiency of a Laue lens for X and Gamma ray focusing in the energy range 60 ÷ 600 keV is close...
An instrument based on the l ight figure technique for optical orientation of Ge and Si is described...
Light figures projected on a plate screen from germanium single crystals, polished mechanically and ...
Characterizing crystallographic orientation is essential for assessing structure-property relationsh...
The light-figure method is compared with the back-reflection Laue method for determining crystal ori...
A germanium crystal was bent through a grid of superficial grooves, manufactured on the sample surfa...
In the crystal growth lab of South Dakota University, we are growing high purity germanium (HPGe) cr...
We present the numerical optimization and the technological development progress of x-ray optics bas...
A procedure of the back-reflection Laue method for determining crystal orientations is described. In...
A procedure of the perfect, accurate, and rapid orientation determination by the light-figure method...
The grooving technique was employed for manufacturing a self-standing curved Ge crystal. The crystal...
Aiming at the fabrication of germanium strips with lateral faces provided of excellent crystal quali...
The article presents an assessment of the crystal perfection of single-crystal turbine blades based ...
Aiming at the fabrication of germanium strips with lateral faces provided of excellent crystal quali...
An experimental study on the method of indentations for bent crystals to realize a hard X-ray Laue l...
The efficiency of a Laue lens for X and Gamma ray focusing in the energy range 60 ÷ 600 keV is close...