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ct tran bwise abwis to tun sents 078 A ived of In-doped ZnO nanowires on patterned SiO2/ITO/SiO2/ITO/glass substrates by reactive evaporation. The method can be cheaply, the ZnO NW FETs is only three devices working. The process yield is roughly 2.7%. l Soc 28.00 Downloquickly, and easily utilized for mass production. Field-effect transis-tors were fabricated using these ZnO single-crystal nanowires. The details of the growth of the In-doped ZnO nanowires and the proce-dure for fabricating the field-effect transistors are discussed. The optical and electrical properties of the fabricated field-effect transis-tors are also elucidated. Experimental Figure 1 schematically depicts the growth and processing steps that were employed in this study. Before the ZnO nanowires were grown, a SiO2/ITO/SiO2/ITO thin film was deposited on glass sub-strate by radio frequency magnetron sputtering. ITO thickness = 300 nm was prepared on glass to form the bottom gate. The dielectric gate oxide layer comprised SiO2 thickness = 300 nm. ITO thickness = 600 nm was the seed layer for the growth of ZnO nanowires. The capping layer was SiO2 thickness = 200 nm, pre-venting the growth of ZnO NWs. As presented in Fig. 1, a pattern with a 5 m separation between drain and source electrodes was An MAC MXP18 X-ray diffractometer XRD and a JEOL JEM-2100F high resolution transmission electron microscope HRTEM, operated at 200 kV, were used to characterize the crystallographic and structural properties of the as-grown ZnO nanowires. The sur-face morphologies of the samples and size distribution of the nano-wires were characterized using a JEOL JSM-6500F field-emission scanning electron microscope FESEM operated at 5 keV. The pho-toluminescence PL properties of the as-grown ZnO nanowires were also characterized using a Jobin Yvon-Spex fluorolog-3 spec-trophotometer. A Xe lamp that emitted at 254 nm was used as the excitation source during PL measurements. The electrical character-istics were measured using an HP-4156C semiconductor parameter analyzer. Spectral responsivity measurements were made using a 250 W xenon arc lamp as a light source using a standard synchro-nous detection scheme