Add to ORKGThe paper focuses on specific issues associated to rare earth silicide integration on UTB-SOI substrate with a particular attention to erbium and ytterbium silicides. Due to the limited Si source, defects generation on SOI is prevented compared to bulk substrate. Reaction of RE with dielectric materials limits the temperature of silicidation. It is shown that RE S/D MOSFETs are still limited in current-drive by the Schottky barrier height
Abstract — In this paper, we study experimentally and numerically the Schottky barrier height (SBH) ...
The Schottky barrier MOSFET has been proposed recently as an alternative to traditional MOSFET for s...
We present experimental results on silicon-on-insulator Schottky-barrier MOSFETs with fully silicide...
The paper focuses on specific issues associated to rare earth silicide integration on UTB-SOI substr...
The continuous miniaturization of metal-oxide-semiconductor field-effect transistors (MOSFET) experi...
We investigate Er silicide formed on n-type silicon. In order to protect the Er from oxidation durin...
Ytterbium silicide provides a low Schottky barrier height to electron on n-type silicon. This proper...
A simple but effective rare earth metal (RE) confinement structure is demonstrated to suppress surfa...
As continued MOSFETs scaling becomes increasingly challenging, solutions are urgently needed to meet...
For ideal scaling, per generation (~3 years), a O.7x reduction in Metal Oxide Semiconductor Field Ef...
As the device geometry dramatically shrinks, the silicide/Si contact resistance on source/drain regi...
In this paper. we present a detailed study of nickel-silicide source and drain Schottky barrier MOSF...
Very thin erbium silicide layers have been used as source and drain contacts to n-type Si in low Sch...
48 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.Long channel transistors using...
This paper proposes the implementation of a dopant segregated band-edge silicide using implantation-...
Abstract — In this paper, we study experimentally and numerically the Schottky barrier height (SBH) ...
The Schottky barrier MOSFET has been proposed recently as an alternative to traditional MOSFET for s...
We present experimental results on silicon-on-insulator Schottky-barrier MOSFETs with fully silicide...
The paper focuses on specific issues associated to rare earth silicide integration on UTB-SOI substr...
The continuous miniaturization of metal-oxide-semiconductor field-effect transistors (MOSFET) experi...
We investigate Er silicide formed on n-type silicon. In order to protect the Er from oxidation durin...
Ytterbium silicide provides a low Schottky barrier height to electron on n-type silicon. This proper...
A simple but effective rare earth metal (RE) confinement structure is demonstrated to suppress surfa...
As continued MOSFETs scaling becomes increasingly challenging, solutions are urgently needed to meet...
For ideal scaling, per generation (~3 years), a O.7x reduction in Metal Oxide Semiconductor Field Ef...
As the device geometry dramatically shrinks, the silicide/Si contact resistance on source/drain regi...
In this paper. we present a detailed study of nickel-silicide source and drain Schottky barrier MOSF...
Very thin erbium silicide layers have been used as source and drain contacts to n-type Si in low Sch...
48 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.Long channel transistors using...
This paper proposes the implementation of a dopant segregated band-edge silicide using implantation-...
Abstract — In this paper, we study experimentally and numerically the Schottky barrier height (SBH) ...
The Schottky barrier MOSFET has been proposed recently as an alternative to traditional MOSFET for s...
We present experimental results on silicon-on-insulator Schottky-barrier MOSFETs with fully silicide...