Preparation of Al2O3 Thin Films by Atomic Layer Deposition Using Dimethylaluminum Isopropoxide and Water and Their Reaction Mechanisms

where the asterisks designate the surface species. Growth of stoichiometric Al2O3 thin films with carbon incorporation less than 1.5 atomic % was confirmed by depth profiling Auger electron spectroscopy. Atomic force microscopy images show atomically flat and uniform surfaces. X-ray photoelectron spectroscopy and cross-sectional high resolution transmission electron microscopy of an Al2O3 film indicate that there is no distinguishable interfacial Si oxide layer except that a very thin layer of aluminum silicate may have been formed between the Al2O3 film and the Si substrate. C-V measurements of an Al2O3 film showed capacitance values comparable to previously reported values. KeyWords: Aluminum oxide, Atomic layer deposition (ALD), Dimethylaluminum isopropoxide, Surface chemical reactio