Add to ORKGIntroduction- As feature sizes of integrated circuits (ICs) continuously shrink to sub-micro, interconnect resistance-capacitance (RC) delay begins to dominate overall device speed in copper/low-k metallization. To decrease RC delay time, interconnection resistance has been reduced by using copper (Cu) instead of aluminum, while interlaye
The solution to the problem of increased resistance-capacitance (RC) delay in the present day ULSI i...
The Cu/low-k damascene process was introduced to alleviate the increase in the RC delay of Al/SiO2 i...
textElectromigration (EM) reliability was investigated for dual-damascene Cu/oxide and Cu/low k int...
textAdvanced integrated circuit (IC) technology has implemented new materials for necessary and time...
Advanced interconnect technologies require the continuous development of reliable low-k dielectric m...
[[abstract]]The effect of absorbed moisture on the electrical characteristics and reliability of low...
As the circuit density of electric equipment steadily increases, metallization processes demand new ...
[[abstract]]The influence of moisture on Cu line electromigration (EM) behavior of dual damascene in...
As VLSI technologies advance, they closely follow Moore’s Law where devices are scaled down to small...
Cu and low-k dielectric based back-end-of-the-line (BEOL) interconnects is indispensable in advanced...
[[abstract]]The impact of dielectric materials on the reliability of advanced copper (Cu) interconne...
The miniaturization of integrated circuits (ICs) has led to the use of copper and low-k dielectrics ...
La réduction des dimensions des dispositifs micro-électroniques élémentaires, notamment des transist...
textThe function of an interconnect system is to distribute signals and power to various circuits i...
In order to realize the high performance of RC delay, direct polished porous type ultra low-K film (...
The solution to the problem of increased resistance-capacitance (RC) delay in the present day ULSI i...
The Cu/low-k damascene process was introduced to alleviate the increase in the RC delay of Al/SiO2 i...
textElectromigration (EM) reliability was investigated for dual-damascene Cu/oxide and Cu/low k int...
textAdvanced integrated circuit (IC) technology has implemented new materials for necessary and time...
Advanced interconnect technologies require the continuous development of reliable low-k dielectric m...
[[abstract]]The effect of absorbed moisture on the electrical characteristics and reliability of low...
As the circuit density of electric equipment steadily increases, metallization processes demand new ...
[[abstract]]The influence of moisture on Cu line electromigration (EM) behavior of dual damascene in...
As VLSI technologies advance, they closely follow Moore’s Law where devices are scaled down to small...
Cu and low-k dielectric based back-end-of-the-line (BEOL) interconnects is indispensable in advanced...
[[abstract]]The impact of dielectric materials on the reliability of advanced copper (Cu) interconne...
The miniaturization of integrated circuits (ICs) has led to the use of copper and low-k dielectrics ...
La réduction des dimensions des dispositifs micro-électroniques élémentaires, notamment des transist...
textThe function of an interconnect system is to distribute signals and power to various circuits i...
In order to realize the high performance of RC delay, direct polished porous type ultra low-K film (...
The solution to the problem of increased resistance-capacitance (RC) delay in the present day ULSI i...
The Cu/low-k damascene process was introduced to alleviate the increase in the RC delay of Al/SiO2 i...
textElectromigration (EM) reliability was investigated for dual-damascene Cu/oxide and Cu/low k int...