Fabrication and Characterization of the Charge-Plasma Diode

Abstract—We present a new lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-on-insulator. The device utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body. We demonstrate that the proposed device provides a low and constant reverse leakage-current density of about 1 fA/µm with ON/OFF current ratios of around 107 at 1-V forward bias and room temperature. In the forward mode, a current swing of 88 mV/dec is obtained, which is reduced to 68 mV/dec by back-gate biasing. Index Terms—Buried oxide (BOX), charge-plasma (CP) diode, diode, p-i-n diode, Schottky barrier, silicon-on-insulator (SOI). I