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g, Ma rough n of a the W of the tes an r in th tes us ic acid vertic lectrod strate 606 A ived In practice, however, an additional barrier removal process is terminating with the application of a constant anodic voltage in po-l Soc 28.00 Downlorequired to expose the substrate surface at the pore bottom because a thin barrier layer of Al2O3 separates the pores from the substrates after anodization.10-12 The barrier layer can be removed by chemical etching typically in diluted phosphoric acid, but this results in a significant widening of the pores that makes it difficult to provide scaffolds for small-diameter 1D nanomaterials as defined by the original unetched AAO scaffold.13,18,20 Furthermore, a substrate can react electrochemically after Al anodization is complete. Metals, such as Pt and ITO, violently produce O2 gas from water electrolysis under anodic conditions or H2 gas in cathodic conditions, which leads to nonuniform anodization over large-area substrates and de-tachment of the AAO from the substrate.14,17,18 Oxidative metals, such as Ta Ref. 21 and Nb Ref. 22, leave insulating and semi-conducting by-products that are difficult to selectively remove with respect to Al2O3. To fully utilize the important structural features of AAO scaf-folds for the assembly of vertically aligned 1D nanomaterials, it is highly desirable to develop a process for the fabrication of AAO scaffolds on any substrate and expose the surface of the substrate at the base of the pore without widening of pores. So far, fabrication of rous AAO-forming electrolytes. Then, we determine the consumed thickness of the remaining W layer for the anodic oxidation under a variety of conditions. A through-pore AAO/IS structure in the present case, Au substrates was fabricated by anodization of multilayer structures, i.e., Al/W/Au, with W interlayers with pre-cisely controlled thickness so that the AAO barrier layer can be perforated to expose the substrate surface at the pore base using a selective wet etching process. Finally, Au and Pt nanowires with controlled diameter from about 12 nm to about 120 nm were grown using electrodeposition to demonstrate the successful implementa-tion of the W interlayer for the through-pore AAO/Au process with-out modification of the nanostructure of the as-grown scaffold