Low Temperature Formation of Shallow p § Junctions by Implantation into Thin Pd2Si Films on Si Substrates

Excellent silicided shallow p+n junctions have been successfully achieved by the implantation of BF ~ ions into thin Pd2Si films on Si substrates to a dose of 5 • 10 ~5 cm-2 and subsequent low temperature ( ven at 550 ~ furnace annealing. The formed junctions have been characterized for respective implantation conditions. In this experiment, he implant energy is the key role in obtaining a low leakage diode. Reverse current density of about 3 nA/cm ~ and an ideality factor of about 1.05 can be attained by the implantation of BF ~ ions at 80 keV and subsequent annealing at 550 ~ The junction depth is about 0.09 ~m, measured by the spread resistance method. As compared with the results of unimplanted specimens, the implantation of BF ~ ions into a thin Pd2Si layer can stabilize the silicide film and prevent i from forming islands uring high temperature annealing