QUASI-CHEMICAL REACTIONS IN IRRADIATED SILICON

There are described the quasi-chemical reactions that take place between radiation defects and impurities in irradiated silicon. It has been experimentally investigated single-crystalline n- and p-type silicon doped, respectively, with phosphorus or boron, irradiated with high-energy electrons or protons and subjected to the high-temperature isochronous annealing. Rates of quasi-chemical reactions are found to be dependent on the charge-states of reactants and then controllable by varying the irradiation conditions – beam-intensity, irradiation temperature and IR light exposure during the irradiation, as well as temperature of annealing of the previously irradiated samples. It is shown that the quasi-chemical reactions can serve as effective tools for tuning the electronic properties of silicon, the basic material of micro- and nanoelectronics