Add to ORKGA series of new non-fluorinated volatile copper precursors are described which have been designed for ALD of copper. These new molecules are low melting solids which show outstanding thermal stability and high chemical reactivity with molecular hydrogen to give pure copper films on ruthenium substrates in the temperature range of 130-200°C. Using ruthenium (001) substrates results in strongly adherent ALD copper films which are preferentially oriented (111) for optimal electrical performance
Acetamidinate precursors have shown great promise for atomic layer deposition (ALD) applications, bu...
Copper films with (1 1 1) texture are of crucial importance in integrated circuit interconnects. We ...
Copper(I) amidinate [Cu(i-Pr-Me-AMD)]2 was investigated to produce copper films in conventional low ...
Agglomeration is a critical issue for depositing copper (Cu) thin films, and therefore, the depositi...
As a possible alternative for growing seed layers required for electrochemical Cu deposition of meta...
As a possible alternative for growing seed layers required for electrochemical Cu deposition of meta...
The continued dominance of copper in microelectronic manufacturing is due in part to the techniques ...
This work concerns the atomic layer deposition (ALD) of copper. ALD is a technique that allows confo...
Copper-based multi-level metallization systems in today's ultralarge-scale integrated electronic cir...
Funding Information: The authors acknowledge the use of the Circular Raw MatTERS Finland Infrastruct...
The coating of complex three-dimensional structures with ultrathin metal films is of great interest ...
Copper-based multi-level metallization systems in today’s ultralarge-scale integrated electronic ci...
Atomic layer deposition (ALD) of copper films is getting enormous interest. Ultrathin Cu films are a...
| openaire: EC/FP7/339478/EU//LAYERENG-HYBMATWe report a promising approach to use an organic reduct...
In this work, an approach for copper atomic layer deposition (ALD) via reduction of CuxO films was i...
Acetamidinate precursors have shown great promise for atomic layer deposition (ALD) applications, bu...
Copper films with (1 1 1) texture are of crucial importance in integrated circuit interconnects. We ...
Copper(I) amidinate [Cu(i-Pr-Me-AMD)]2 was investigated to produce copper films in conventional low ...
Agglomeration is a critical issue for depositing copper (Cu) thin films, and therefore, the depositi...
As a possible alternative for growing seed layers required for electrochemical Cu deposition of meta...
As a possible alternative for growing seed layers required for electrochemical Cu deposition of meta...
The continued dominance of copper in microelectronic manufacturing is due in part to the techniques ...
This work concerns the atomic layer deposition (ALD) of copper. ALD is a technique that allows confo...
Copper-based multi-level metallization systems in today's ultralarge-scale integrated electronic cir...
Funding Information: The authors acknowledge the use of the Circular Raw MatTERS Finland Infrastruct...
The coating of complex three-dimensional structures with ultrathin metal films is of great interest ...
Copper-based multi-level metallization systems in today’s ultralarge-scale integrated electronic ci...
Atomic layer deposition (ALD) of copper films is getting enormous interest. Ultrathin Cu films are a...
| openaire: EC/FP7/339478/EU//LAYERENG-HYBMATWe report a promising approach to use an organic reduct...
In this work, an approach for copper atomic layer deposition (ALD) via reduction of CuxO films was i...
Acetamidinate precursors have shown great promise for atomic layer deposition (ALD) applications, bu...
Copper films with (1 1 1) texture are of crucial importance in integrated circuit interconnects. We ...
Copper(I) amidinate [Cu(i-Pr-Me-AMD)]2 was investigated to produce copper films in conventional low ...