Abstract:The etch characteristics of Ni thin films masked with a photoresist were investigated using inductively coupled plasma reactive ion etching in a Cl2/Ar gas mix. As the Cl2 concentration increased, the etch rate of Ni films decreased and the redeposited materials around the etched films were reduced. These results indicate that the etching of Ni films obeys mainly a physical mechanism. The reduction of redeposited materials with increas-ing Cl2 concentration implies the involvement of chemical reaction in the etching of Ni thin films. The degree of etch anisotropy was improved with increasing coil rf power and dc-bias voltage. Slight improvement in the etch profile was observed at low gas pressure. An x-ray photoelectron spectroscop...
Films of electrochromic Ni oxide, with thickness in the ∼100–1000-nm range, were prepared by reactiv...
Films of electrochromic Ni oxide, with thickness in the ∼100–1000-nm range, were prepared by reactiv...
Films of electrochromic Ni oxide, with thickness in the ∼100–1000-nm range, were prepared by reactiv...
This work demonstrated a generalizable approach for patterning metals on the nanometer scale. As the...
This work demonstrated a generalizable approach for patterning metals on the nanometer scale. As the...
Ni electroless films were used as a material for hard mask during highdensity ICP plasma etching. Th...
Ni-P, Ni-B and SiO2 films were used as hard mask materials in Si etching using a high-density induct...
Etching of NiFe films covered with an organic photo-resist or Ti was successfully performed by an in...
Reactive ion etching of yttrium oxide thin films was investigated using CF4/O2, BCl3, HBr and Cl2 in...
The etching of Au using photoresist masks and hard masks on GaAs substrates was investigated using a...
Platinum thin films have been successfully etched without redeposition of etch products using chlori...
Nickel films were deposited from a vapour phase (e-gun source) onto amorphous glass substrates at ro...
The characteristics of lateral Ni film etching by nitric-acid-based etchant are examined using sampl...
The properties of electroplated Ni thin films have been systematically investigated as a function of...
Films of electrochromic Ni oxide, with thickness in the ∼100–1000-nm range, were prepared by reactiv...
Films of electrochromic Ni oxide, with thickness in the ∼100–1000-nm range, were prepared by reactiv...
Films of electrochromic Ni oxide, with thickness in the ∼100–1000-nm range, were prepared by reactiv...
Films of electrochromic Ni oxide, with thickness in the ∼100–1000-nm range, were prepared by reactiv...
This work demonstrated a generalizable approach for patterning metals on the nanometer scale. As the...
This work demonstrated a generalizable approach for patterning metals on the nanometer scale. As the...
Ni electroless films were used as a material for hard mask during highdensity ICP plasma etching. Th...
Ni-P, Ni-B and SiO2 films were used as hard mask materials in Si etching using a high-density induct...
Etching of NiFe films covered with an organic photo-resist or Ti was successfully performed by an in...
Reactive ion etching of yttrium oxide thin films was investigated using CF4/O2, BCl3, HBr and Cl2 in...
The etching of Au using photoresist masks and hard masks on GaAs substrates was investigated using a...
Platinum thin films have been successfully etched without redeposition of etch products using chlori...
Nickel films were deposited from a vapour phase (e-gun source) onto amorphous glass substrates at ro...
The characteristics of lateral Ni film etching by nitric-acid-based etchant are examined using sampl...
The properties of electroplated Ni thin films have been systematically investigated as a function of...
Films of electrochromic Ni oxide, with thickness in the ∼100–1000-nm range, were prepared by reactiv...
Films of electrochromic Ni oxide, with thickness in the ∼100–1000-nm range, were prepared by reactiv...
Films of electrochromic Ni oxide, with thickness in the ∼100–1000-nm range, were prepared by reactiv...
Films of electrochromic Ni oxide, with thickness in the ∼100–1000-nm range, were prepared by reactiv...